CMOS compatible SOI MESFETs for extreme environment applications

James Vandersand, Vadim Kushner, Jinman Yang, Benjamin Blalock, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Silicon-on-insulator MESFETs have been manufactured using a commercial SOI CMOS process and their electrical characteristics measured from room temperature up to 200°C. No modifications were made to the CMOS process flow. The prototype devices use a CoSi2 gate material and the gate current follows the expected Shottky diode behavior. At room temperature a 0.6 μm gate length device has a threshold voltage of - 0.8 V with an off-state drain current of approximately 5 nA. The device shows an attractive family of I-V curves up to 200°C. For higher temperatures the reverse diode current makes it hard to switch the device off. Numerical simulations of a similar device with a higher barrier height PtSi gate show reasonable behavior up to 300°C.

Original languageEnglish (US)
Title of host publicationIEEE Aerospace Conference Proceedings
Volume2005
DOIs
StatePublished - 2005
Event2005 IEEE Aerospace Conference - Big Sky, MT, United States
Duration: Mar 5 2005Mar 12 2005

Other

Other2005 IEEE Aerospace Conference
CountryUnited States
CityBig Sky, MT
Period3/5/053/12/05

Fingerprint

Diodes
Drain current
Threshold voltage
Temperature
Switches
Silicon
Computer simulation

ASJC Scopus subject areas

  • Aerospace Engineering

Cite this

Vandersand, J., Kushner, V., Yang, J., Blalock, B., & Thornton, T. (2005). CMOS compatible SOI MESFETs for extreme environment applications. In IEEE Aerospace Conference Proceedings (Vol. 2005). [1559564] https://doi.org/10.1109/AERO.2005.1559564

CMOS compatible SOI MESFETs for extreme environment applications. / Vandersand, James; Kushner, Vadim; Yang, Jinman; Blalock, Benjamin; Thornton, Trevor.

IEEE Aerospace Conference Proceedings. Vol. 2005 2005. 1559564.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vandersand, J, Kushner, V, Yang, J, Blalock, B & Thornton, T 2005, CMOS compatible SOI MESFETs for extreme environment applications. in IEEE Aerospace Conference Proceedings. vol. 2005, 1559564, 2005 IEEE Aerospace Conference, Big Sky, MT, United States, 3/5/05. https://doi.org/10.1109/AERO.2005.1559564
Vandersand J, Kushner V, Yang J, Blalock B, Thornton T. CMOS compatible SOI MESFETs for extreme environment applications. In IEEE Aerospace Conference Proceedings. Vol. 2005. 2005. 1559564 https://doi.org/10.1109/AERO.2005.1559564
Vandersand, James ; Kushner, Vadim ; Yang, Jinman ; Blalock, Benjamin ; Thornton, Trevor. / CMOS compatible SOI MESFETs for extreme environment applications. IEEE Aerospace Conference Proceedings. Vol. 2005 2005.
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