CMOS compatible SOI MESFETs for extreme environment applications

James Vandersand; Vadim Kushner; Jinman Yang; Benjamin Blalock; Trevor Thornton

doi:10.1109/AERO.2005.1559564

CMOS compatible SOI MESFETs for extreme environment applications

James Vandersand, Vadim Kushner, Jinman Yang, Benjamin Blalock, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Silicon-on-insulator MESFETs have been manufactured using a commercial SOI CMOS process and their electrical characteristics measured from room temperature up to 200°C. No modifications were made to the CMOS process flow. The prototype devices use a CoSi₂ gate material and the gate current follows the expected Shottky diode behavior. At room temperature a 0.6 μm gate length device has a threshold voltage of - 0.8 V with an off-state drain current of approximately 5 nA. The device shows an attractive family of I-V curves up to 200°C. For higher temperatures the reverse diode current makes it hard to switch the device off. Numerical simulations of a similar device with a higher barrier height PtSi gate show reasonable behavior up to 300°C.

Original language	English (US)
Title of host publication	Proceedings - 2005 IEEE Aerospace Conference
DOIs	https://doi.org/10.1109/AERO.2005.1559564
State	Published - 2005
Event	2005 IEEE Aerospace Conference - Big Sky, MT, United States Duration: Mar 5 2005 → Mar 12 2005

Publication series

Name	IEEE Aerospace Conference Proceedings
Volume	2005
ISSN (Print)	1095-323X

Other

Other	2005 IEEE Aerospace Conference
Country/Territory	United States
City	Big Sky, MT
Period	3/5/05 → 3/12/05

ASJC Scopus subject areas

Aerospace Engineering
Space and Planetary Science

Access to Document

10.1109/AERO.2005.1559564

Cite this

@inproceedings{66f0363caf264172b930ddcf6a583806,

title = "CMOS compatible SOI MESFETs for extreme environment applications",

abstract = "Silicon-on-insulator MESFETs have been manufactured using a commercial SOI CMOS process and their electrical characteristics measured from room temperature up to 200°C. No modifications were made to the CMOS process flow. The prototype devices use a CoSi2 gate material and the gate current follows the expected Shottky diode behavior. At room temperature a 0.6 μm gate length device has a threshold voltage of - 0.8 V with an off-state drain current of approximately 5 nA. The device shows an attractive family of I-V curves up to 200°C. For higher temperatures the reverse diode current makes it hard to switch the device off. Numerical simulations of a similar device with a higher barrier height PtSi gate show reasonable behavior up to 300°C.",

author = "James Vandersand and Vadim Kushner and Jinman Yang and Benjamin Blalock and Trevor Thornton",

year = "2005",

doi = "10.1109/AERO.2005.1559564",

language = "English (US)",

isbn = "0780388704",

series = "IEEE Aerospace Conference Proceedings",

booktitle = "Proceedings - 2005 IEEE Aerospace Conference",

note = "2005 IEEE Aerospace Conference ; Conference date: 05-03-2005 Through 12-03-2005",

}

TY - GEN

T1 - CMOS compatible SOI MESFETs for extreme environment applications

AU - Vandersand, James

AU - Kushner, Vadim

AU - Yang, Jinman

AU - Blalock, Benjamin

AU - Thornton, Trevor

PY - 2005

Y1 - 2005

N2 - Silicon-on-insulator MESFETs have been manufactured using a commercial SOI CMOS process and their electrical characteristics measured from room temperature up to 200°C. No modifications were made to the CMOS process flow. The prototype devices use a CoSi2 gate material and the gate current follows the expected Shottky diode behavior. At room temperature a 0.6 μm gate length device has a threshold voltage of - 0.8 V with an off-state drain current of approximately 5 nA. The device shows an attractive family of I-V curves up to 200°C. For higher temperatures the reverse diode current makes it hard to switch the device off. Numerical simulations of a similar device with a higher barrier height PtSi gate show reasonable behavior up to 300°C.

AB - Silicon-on-insulator MESFETs have been manufactured using a commercial SOI CMOS process and their electrical characteristics measured from room temperature up to 200°C. No modifications were made to the CMOS process flow. The prototype devices use a CoSi2 gate material and the gate current follows the expected Shottky diode behavior. At room temperature a 0.6 μm gate length device has a threshold voltage of - 0.8 V with an off-state drain current of approximately 5 nA. The device shows an attractive family of I-V curves up to 200°C. For higher temperatures the reverse diode current makes it hard to switch the device off. Numerical simulations of a similar device with a higher barrier height PtSi gate show reasonable behavior up to 300°C.

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DO - 10.1109/AERO.2005.1559564

M3 - Conference contribution

AN - SCOPUS:33751509962

SN - 0780388704

SN - 9780780388703

T3 - IEEE Aerospace Conference Proceedings

BT - Proceedings - 2005 IEEE Aerospace Conference

T2 - 2005 IEEE Aerospace Conference

Y2 - 5 March 2005 through 12 March 2005

ER -

CMOS compatible SOI MESFETs for extreme environment applications

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