CMOS compatible SOI MESFETs for extreme environment applications

James Vandersand, Vadim Kushner, Jinman Yang, Benjamin Blalock, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Silicon-on-insulator MESFETs have been manufactured using a commercial SOI CMOS process and their electrical characteristics measured from room temperature up to 200°C. No modifications were made to the CMOS process flow. The prototype devices use a CoSi2 gate material and the gate current follows the expected Shottky diode behavior. At room temperature a 0.6 μm gate length device has a threshold voltage of - 0.8 V with an off-state drain current of approximately 5 nA. The device shows an attractive family of I-V curves up to 200°C. For higher temperatures the reverse diode current makes it hard to switch the device off. Numerical simulations of a similar device with a higher barrier height PtSi gate show reasonable behavior up to 300°C.

Original languageEnglish (US)
Title of host publicationProceedings - 2005 IEEE Aerospace Conference
DOIs
StatePublished - Dec 1 2005
Event2005 IEEE Aerospace Conference - Big Sky, MT, United States
Duration: Mar 5 2005Mar 12 2005

Publication series

NameIEEE Aerospace Conference Proceedings
Volume2005
ISSN (Print)1095-323X

Other

Other2005 IEEE Aerospace Conference
CountryUnited States
CityBig Sky, MT
Period3/5/053/12/05

ASJC Scopus subject areas

  • Aerospace Engineering
  • Space and Planetary Science

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  • Cite this

    Vandersand, J., Kushner, V., Yang, J., Blalock, B., & Thornton, T. (2005). CMOS compatible SOI MESFETs for extreme environment applications. In Proceedings - 2005 IEEE Aerospace Conference [1559564] (IEEE Aerospace Conference Proceedings; Vol. 2005). https://doi.org/10.1109/AERO.2005.1559564