Abstract
Mobile technologies have relied on RF switches for a long time. Though the basic function of the switch has remained the same, the way they have been made has changed in the recent past. In the past few years work has been done to use MEMS technologies in designing and fabricating an RF switch that would in many ways replace the electronic and mechanical switches that have been used for so long. The work that is described here is an attempt to design and fabricate an RF MEMS switch that can handle higher RF power and have CMOS compatible operating voltages.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | H. Urey, A. El-Fatatry |
Pages | 193-201 |
Number of pages | 9 |
Volume | 5455 |
DOIs | |
State | Published - 2004 |
Event | MEM, MOEMS, and Micromachining - Strasbourg, France Duration: Apr 29 2004 → Apr 30 2004 |
Other
Other | MEM, MOEMS, and Micromachining |
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Country/Territory | France |
City | Strasbourg |
Period | 4/29/04 → 4/30/04 |
Keywords
- CMOS
- Electrostatic
- High power
- MEMS switch
- RF
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics