Abstract

Metal semiconductor field effect transistors (MESFETs) have been fabricated using a 45 nm SOI CMOS technology available from Global Foundries. MESFETs with gate lengths of 200 nm show good manufacturability with well-controlled run-to-run variations. The DC and RF performance of devices with different drain access lengths are compared to illustrate the design trades between high breakdown voltage and high frequency operation. Two applications of the MESFETs for RF integrated circuit (RFIC) design are presented. The first demonstrates integrated n-channel MOSFET-MESFET cascode amplifiers that combine the enhanced voltage operation of the MESFET with the high frequency capability of the scaled MOSFET. The resulting small-signal amplifiers demonstrate cut-off frequencies of 50 GHz when operated with supply voltages of 6 V, significantly higher than the nominal 1 V breakdown voltage of the CMOS transistors. The second application demonstrates a watt-level MESFET power amplifier integrated with a CMOS current steering digital-to-analog converter (DAC). The MESFET serves as the RF output device, while the 4-bit CMOS DAC enables average power tracking. Both examples demonstrate the design flexibility enabled by the CMOS-compatible MESFETs.

Original languageEnglish (US)
JournalIEEE Transactions on Semiconductor Manufacturing
DOIs
StateAccepted/In press - Aug 27 2018

Fingerprint

MESFET devices
integrated circuits
Integrated circuits
CMOS
field effect transistors
metals
digital to analog converters
Digital to analog conversion
Electric breakdown
electrical faults
amplifiers
transistor amplifiers
Cutoff frequency
Electric potential
Foundries
Power amplifiers
foundries
SOI (semiconductors)
electric potential
power amplifiers

Keywords

  • 5G.
  • cascode
  • Digital-to-Analog Converter
  • Logic gates
  • MESFET
  • MESFETs
  • MOSFET
  • Power Amplifier
  • Radio frequency
  • Silicides
  • silicon-on-insulator
  • Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

CMOS-Compatible MESFETs for High Power RF Integrated Circuits. / Mehr, Payam; Moallemi, Soroush; Zhang, Xiong; Lepkowski, William; Kitchen, Jennifer; Thornton, Trevor.

In: IEEE Transactions on Semiconductor Manufacturing, 27.08.2018.

Research output: Contribution to journalArticle

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AU - Mehr, Payam

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AU - Kitchen, Jennifer

AU - Thornton, Trevor

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AB - Metal semiconductor field effect transistors (MESFETs) have been fabricated using a 45 nm SOI CMOS technology available from Global Foundries. MESFETs with gate lengths of 200 nm show good manufacturability with well-controlled run-to-run variations. The DC and RF performance of devices with different drain access lengths are compared to illustrate the design trades between high breakdown voltage and high frequency operation. Two applications of the MESFETs for RF integrated circuit (RFIC) design are presented. The first demonstrates integrated n-channel MOSFET-MESFET cascode amplifiers that combine the enhanced voltage operation of the MESFET with the high frequency capability of the scaled MOSFET. The resulting small-signal amplifiers demonstrate cut-off frequencies of 50 GHz when operated with supply voltages of 6 V, significantly higher than the nominal 1 V breakdown voltage of the CMOS transistors. The second application demonstrates a watt-level MESFET power amplifier integrated with a CMOS current steering digital-to-analog converter (DAC). The MESFET serves as the RF output device, while the 4-bit CMOS DAC enables average power tracking. Both examples demonstrate the design flexibility enabled by the CMOS-compatible MESFETs.

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