CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Chi Xu, J. D. Gallagher, C. L. Senaratne, P. E. Sims, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

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Engineering & Materials Science