CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Chi Xu, J. D. Gallagher, C. L. Senaratne, P. E. Sims, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

New in-situ methods have been developed to dope Ge-on-Si films with P and As using reactions of novel compounds P(MH3)3 and As(MH3)3 (M=Si, Ge) and UHV-CVD and molecular source epitaxy methods. In these experiments Ge3H8, Ge4H10 hydrides were used to deposit intrinsic Ge layers on Si(100) to produce i- Ge/Si(100) platforms upon which the n-Ge layers were grown at ultra-low temperatures of 300-330°C. The resultant n-Ge/i- Ge/Si(100) samples exhibited device quality crystallinity and defect-free microstructures as evidenced by XTEM. Infrared spectroscopic ellipsometry (IRSE) and Hall revealed carrier concentrations, mobilities and resistivities that are on par with values observed in bulk Ge. SIMS gave flat dopant profiles and abrupt transitions at the n/i interfaces. The highest carrier concentration was achieved in As doped samples at 8.44×1019 cm-3 and the lowest resistivity was observed in P doped samples at 4.2×10-4 δcm. Comparison between IRSE and SIMS data revealed near full activation (>80%) of the absolute dopant concentrations in the range of 1×1020 cm-3. The methods reported here have the potential for applications in group-IV semiconductor technologies that require high doping levels, low resistivities and shallow junction depths.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages3-15
Number of pages13
Volume69
Edition14
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

Fingerprint

Spectroscopic ellipsometry
Doping (additives)
Secondary ion mass spectrometry
Carrier concentration
Infrared radiation
Epitaxial growth
Hydrides
Chemical vapor deposition
Deposits
Chemical activation
Semiconductor materials
Defects
Microstructure
Experiments
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Xu, C., Gallagher, J. D., Senaratne, C. L., Sims, P. E., Kouvetakis, J., & Menendez, J. (2015). CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge). In ECS Transactions (14 ed., Vol. 69, pp. 3-15). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0003ecst

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge). / Xu, Chi; Gallagher, J. D.; Senaratne, C. L.; Sims, P. E.; Kouvetakis, John; Menendez, Jose.

ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. p. 3-15.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xu, C, Gallagher, JD, Senaratne, CL, Sims, PE, Kouvetakis, J & Menendez, J 2015, CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge). in ECS Transactions. 14 edn, vol. 69, Electrochemical Society Inc., pp. 3-15, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0003ecst
Xu C, Gallagher JD, Senaratne CL, Sims PE, Kouvetakis J, Menendez J. CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge). In ECS Transactions. 14 ed. Vol. 69. Electrochemical Society Inc. 2015. p. 3-15 https://doi.org/10.1149/06914.0003ecst
Xu, Chi ; Gallagher, J. D. ; Senaratne, C. L. ; Sims, P. E. ; Kouvetakis, John ; Menendez, Jose. / CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge). ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. pp. 3-15
@inproceedings{465a240be99147bc9d48b677db5297c7,
title = "CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)",
abstract = "New in-situ methods have been developed to dope Ge-on-Si films with P and As using reactions of novel compounds P(MH3)3 and As(MH3)3 (M=Si, Ge) and UHV-CVD and molecular source epitaxy methods. In these experiments Ge3H8, Ge4H10 hydrides were used to deposit intrinsic Ge layers on Si(100) to produce i- Ge/Si(100) platforms upon which the n-Ge layers were grown at ultra-low temperatures of 300-330°C. The resultant n-Ge/i- Ge/Si(100) samples exhibited device quality crystallinity and defect-free microstructures as evidenced by XTEM. Infrared spectroscopic ellipsometry (IRSE) and Hall revealed carrier concentrations, mobilities and resistivities that are on par with values observed in bulk Ge. SIMS gave flat dopant profiles and abrupt transitions at the n/i interfaces. The highest carrier concentration was achieved in As doped samples at 8.44×1019 cm-3 and the lowest resistivity was observed in P doped samples at 4.2×10-4 δcm. Comparison between IRSE and SIMS data revealed near full activation (>80{\%}) of the absolute dopant concentrations in the range of 1×1020 cm-3. The methods reported here have the potential for applications in group-IV semiconductor technologies that require high doping levels, low resistivities and shallow junction depths.",
author = "Chi Xu and Gallagher, {J. D.} and Senaratne, {C. L.} and Sims, {P. E.} and John Kouvetakis and Jose Menendez",
year = "2015",
doi = "10.1149/06914.0003ecst",
language = "English (US)",
isbn = "9781607685395",
volume = "69",
pages = "3--15",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "14",

}

TY - GEN

T1 - CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

AU - Xu, Chi

AU - Gallagher, J. D.

AU - Senaratne, C. L.

AU - Sims, P. E.

AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2015

Y1 - 2015

N2 - New in-situ methods have been developed to dope Ge-on-Si films with P and As using reactions of novel compounds P(MH3)3 and As(MH3)3 (M=Si, Ge) and UHV-CVD and molecular source epitaxy methods. In these experiments Ge3H8, Ge4H10 hydrides were used to deposit intrinsic Ge layers on Si(100) to produce i- Ge/Si(100) platforms upon which the n-Ge layers were grown at ultra-low temperatures of 300-330°C. The resultant n-Ge/i- Ge/Si(100) samples exhibited device quality crystallinity and defect-free microstructures as evidenced by XTEM. Infrared spectroscopic ellipsometry (IRSE) and Hall revealed carrier concentrations, mobilities and resistivities that are on par with values observed in bulk Ge. SIMS gave flat dopant profiles and abrupt transitions at the n/i interfaces. The highest carrier concentration was achieved in As doped samples at 8.44×1019 cm-3 and the lowest resistivity was observed in P doped samples at 4.2×10-4 δcm. Comparison between IRSE and SIMS data revealed near full activation (>80%) of the absolute dopant concentrations in the range of 1×1020 cm-3. The methods reported here have the potential for applications in group-IV semiconductor technologies that require high doping levels, low resistivities and shallow junction depths.

AB - New in-situ methods have been developed to dope Ge-on-Si films with P and As using reactions of novel compounds P(MH3)3 and As(MH3)3 (M=Si, Ge) and UHV-CVD and molecular source epitaxy methods. In these experiments Ge3H8, Ge4H10 hydrides were used to deposit intrinsic Ge layers on Si(100) to produce i- Ge/Si(100) platforms upon which the n-Ge layers were grown at ultra-low temperatures of 300-330°C. The resultant n-Ge/i- Ge/Si(100) samples exhibited device quality crystallinity and defect-free microstructures as evidenced by XTEM. Infrared spectroscopic ellipsometry (IRSE) and Hall revealed carrier concentrations, mobilities and resistivities that are on par with values observed in bulk Ge. SIMS gave flat dopant profiles and abrupt transitions at the n/i interfaces. The highest carrier concentration was achieved in As doped samples at 8.44×1019 cm-3 and the lowest resistivity was observed in P doped samples at 4.2×10-4 δcm. Comparison between IRSE and SIMS data revealed near full activation (>80%) of the absolute dopant concentrations in the range of 1×1020 cm-3. The methods reported here have the potential for applications in group-IV semiconductor technologies that require high doping levels, low resistivities and shallow junction depths.

UR - http://www.scopus.com/inward/record.url?scp=84945936247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945936247&partnerID=8YFLogxK

U2 - 10.1149/06914.0003ecst

DO - 10.1149/06914.0003ecst

M3 - Conference contribution

SN - 9781607685395

VL - 69

SP - 3

EP - 15

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -