CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Chi Xu; J. D. Gallagher; C. L. Senaratne; P. E. Sims; John Kouvetakis; Jose Menendez

doi:10.1149/06914.0003ecst

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge)

Chi Xu, J. D. Gallagher, C. L. Senaratne, P. E. Sims, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

New in-situ methods have been developed to dope Ge-on-Si films with P and As using reactions of novel compounds P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge) and UHV-CVD and molecular source epitaxy methods. In these experiments Ge₃H₈, Ge₄H₁₀ hydrides were used to deposit intrinsic Ge layers on Si(100) to produce i- Ge/Si(100) platforms upon which the n-Ge layers were grown at ultra-low temperatures of 300-330°C. The resultant n-Ge/i- Ge/Si(100) samples exhibited device quality crystallinity and defect-free microstructures as evidenced by XTEM. Infrared spectroscopic ellipsometry (IRSE) and Hall revealed carrier concentrations, mobilities and resistivities that are on par with values observed in bulk Ge. SIMS gave flat dopant profiles and abrupt transitions at the n/i interfaces. The highest carrier concentration was achieved in As doped samples at 8.44×10¹⁹ cm^-3 and the lowest resistivity was observed in P doped samples at 4.2×10^-4 δcm. Comparison between IRSE and SIMS data revealed near full activation (>80%) of the absolute dopant concentrations in the range of 1×10²⁰ cm^-3. The methods reported here have the potential for applications in group-IV semiconductor technologies that require high doping levels, low resistivities and shallow junction depths.

Original language	English (US)
Title of host publication	State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
Editors	J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	3-15
Number of pages	13
Edition	14
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06914.0003ecst
State	Published - 2015
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	14
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06914.0003ecst

Cite this

Xu, C., Gallagher, J. D., Senaratne, C. L., Sims, P. E., Kouvetakis, J., & Menendez, J. (2015). CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge). In J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 3-15). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0003ecst

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge). / Xu, Chi; Gallagher, J. D.; Senaratne, C. L. et al.
State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. ed. / J. H. He; C. O'Dwyer; F. Ren; E. Douglas; C. Jagadish; S. Jang; Y. L. Wang; R. P. Lynch; T. J. Anderson; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. p. 3-15 (ECS Transactions; Vol. 69, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, C, Gallagher, JD, Senaratne, CL, Sims, PE, Kouvetakis, J & Menendez, J 2015, CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge). in JH He, C O'Dwyer, F Ren, E Douglas, C Jagadish, S Jang, YL Wang, RP Lynch, TJ Anderson & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 edn, ECS Transactions, no. 14, vol. 69, Electrochemical Society Inc., pp. 3-15, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0003ecst

Xu C, Gallagher JD, Senaratne CL, Sims PE, Kouvetakis J , Menendez J. CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge). In He JH, O'Dwyer C, Ren F, Douglas E, Jagadish C, Jang S, Wang YL, Lynch RP, Anderson TJ, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 ed. Electrochemical Society Inc. 2015. p. 3-15. (ECS Transactions; 14). doi: 10.1149/06914.0003ecst

Xu, Chi ; Gallagher, J. D. ; Senaratne, C. L. et al. / CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH₃)₃ and As(MH₃)₃ (M=Si, Ge). State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. editor / J. H. He ; C. O'Dwyer ; F. Ren ; E. Douglas ; C. Jagadish ; S. Jang ; Y. L. Wang ; R. P. Lynch ; T. J. Anderson ; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. pp. 3-15 (ECS Transactions; 14).

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abstract = "New in-situ methods have been developed to dope Ge-on-Si films with P and As using reactions of novel compounds P(MH3)3 and As(MH3)3 (M=Si, Ge) and UHV-CVD and molecular source epitaxy methods. In these experiments Ge3H8, Ge4H10 hydrides were used to deposit intrinsic Ge layers on Si(100) to produce i- Ge/Si(100) platforms upon which the n-Ge layers were grown at ultra-low temperatures of 300-330°C. The resultant n-Ge/i- Ge/Si(100) samples exhibited device quality crystallinity and defect-free microstructures as evidenced by XTEM. Infrared spectroscopic ellipsometry (IRSE) and Hall revealed carrier concentrations, mobilities and resistivities that are on par with values observed in bulk Ge. SIMS gave flat dopant profiles and abrupt transitions at the n/i interfaces. The highest carrier concentration was achieved in As doped samples at 8.44×1019 cm-3 and the lowest resistivity was observed in P doped samples at 4.2×10-4 δcm. Comparison between IRSE and SIMS data revealed near full activation (>80%) of the absolute dopant concentrations in the range of 1×1020 cm-3. The methods reported here have the potential for applications in group-IV semiconductor technologies that require high doping levels, low resistivities and shallow junction depths.",

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