Abstract

MESFET devices provide high breakdown characteristics, enable high-voltage operation, and direct battery hook-up with no changes in processing on state-of-the-art SOI and SOS CMOS processes. Fundamental analogue building blocks, including single-ended amplifiers and high impedance current mirrors were designed and fabricated in a single poly, three-layer metal digital CMOS technology utilising depletion mode MESFET devices. The SOS MESFETS presented here have a breakdown voltage of over 7.5V without causing irreversible damage. DC characteristics were measured by varying the power supply from 2.5 to 5.5V. The measured DC transfer curves of the amplifier show good agreement with the simulated ones with extracted models from the same process. The accuracy of the current mirror showing inverse operation is within ±5 for the current from 0 to 1.5mA with the power supply from 2.5 to 5.5V.

Original languageEnglish (US)
Pages (from-to)624-626
Number of pages3
JournalElectronics Letters
Volume45
Issue number12
DOIs
StatePublished - Jun 19 2009

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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