Abstract

MESFET devices provide high breakdown characteristics, enable high voltage operation, and direct battery hook-up with no changes in processing on state of the art SOI and SOS CMOS processes. Fundamental analog building blocks, including single-ended and differential amplifiers and high impedance current mirror were designed and fabricated in a single poly, 3-layer metal digital CMOS technology utilizing fully depletion mode MESFET devices. The measured breakdown voltage of the SOS MESFETS presented here has a breakdown voltage of over 7.5 V without causing irreversible damage. DC characteristics were measured by varying the power supply from 2.5 to 5.5V. The measured DC transfer curves of amplifiers show good agreement with the simulated ones with extracted models from the same process. The accuracy of the current mirror showing inverse operation is within ±5% for the current from 0 to 1.5 mA with the power supply from 2.5 to 5.5V.

Original languageEnglish (US)
Title of host publication2009 52nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS '09
Pages122-125
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event2009 52nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS '09 - Cancun, Mexico
Duration: Aug 2 2009Aug 5 2009

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Other

Other2009 52nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS '09
CountryMexico
CityCancun
Period8/2/098/5/09

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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