CMOS bi-directional ultra-wideband galvanically isolated die-To-die communication utilizing a double-isolated transformer

Mahdi Javid, Karel Ptacek, Richard Burton, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this work, an ultra-wideband (UWB) bi-directional galvanic isolator (BDGI) is reported for the first time. The proposed design methodology uses time-division-duplex (TDD) protocol to merge the functionality of two passive galvanically isolated channels into one magnetically coupled communication channel between two chips, enabling up to 50% form-factor and assembly cost reduction while achieving state-of-Art performance. A low-power UWB pulse polarity-modulated transceiver architecture is presented to maximize the channel's capacity to 300 Mb/s and minimize power consumption and propagation delay to 200 pj/b and 5 ns respectively. The communication channel utilizes a double-isolated transformer coupled channel consisting of two transformers connected in series using bondwires and achieves 11 kVpk (7.8 kVrms) high voltage isolation, the highest reported without adding extra steps or alternating the native CMOS fabrication process. The system is realized in a 0.25 um BCD (Bipolar-CMOS-DMOS) process with 0.8 mm2 silicon area per channel. The system uses odd-symmetry center-Tapped transformers and differential transceivers to increase noise/transient immunity.

Original languageEnglish (US)
Title of host publication2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages88-91
Number of pages4
Volume2018-May
ISBN (Electronic)9781538629260
DOIs
StatePublished - Jun 22 2018
Event30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 - Chicago, United States
Duration: May 13 2018May 17 2018

Other

Other30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
CountryUnited States
CityChicago
Period5/13/185/17/18

Keywords

  • Chip-To-Chip
  • Gate-Driver
  • HVIC
  • Integrated-Passive-Device
  • Isolators
  • RF
  • System-on-chip
  • Ultra-Wide-Band

ASJC Scopus subject areas

  • Engineering(all)

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    Javid, M., Ptacek, K., Burton, R., & Kitchen, J. (2018). CMOS bi-directional ultra-wideband galvanically isolated die-To-die communication utilizing a double-isolated transformer. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 (Vol. 2018-May, pp. 88-91). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2018.8393609