Clustering of Au on the faulted half of the Si(111)-7 X 7 unit cell

S. K. Ghose, Peter Bennett, I. K. Robinson

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We present a structure for Au deposited on the Si(111)-7 X 7 surface at very low coverage obtained by x-ray diffraction. We have found Au adsorbed exclusively on the faulted side of the Si(111)-7 X 7 unit cell. The Au atoms are found to reside in sites which lie above the Si and do not cause significant rearrangement of the covalent bonding network of the substrate, suggesting they are weakly bound. The sites have considerable disorder and can be modeled by a strongly anisotropic Debye-Waller factor. From this we extract the potential for interaction of Au with Si(111) 7 X 7, which is in reasonable agreement with theoretical predictions for Si and other species on Si(111) 7 X 7.

Original languageEnglish (US)
Article number073407
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number7
DOIs
StatePublished - Feb 1 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Clustering of Au on the faulted half of the Si(111)-7 X 7 unit cell'. Together they form a unique fingerprint.

  • Cite this