Clustering of Au on the faulted half of the Si(111)-7 X 7 unit cell

S. K. Ghose, Peter Bennett, I. K. Robinson

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We present a structure for Au deposited on the Si(111)-7 X 7 surface at very low coverage obtained by x-ray diffraction. We have found Au adsorbed exclusively on the faulted side of the Si(111)-7 X 7 unit cell. The Au atoms are found to reside in sites which lie above the Si and do not cause significant rearrangement of the covalent bonding network of the substrate, suggesting they are weakly bound. The sites have considerable disorder and can be modeled by a strongly anisotropic Debye-Waller factor. From this we extract the potential for interaction of Au with Si(111) 7 X 7, which is in reasonable agreement with theoretical predictions for Si and other species on Si(111) 7 X 7.

Original languageEnglish (US)
Article number073407
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number7
DOIs
StatePublished - Feb 2005

Fingerprint

x ray diffraction
Diffraction
disorders
X rays
Atoms
causes
Substrates
predictions
cells
atoms
interactions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Clustering of Au on the faulted half of the Si(111)-7 X 7 unit cell. / Ghose, S. K.; Bennett, Peter; Robinson, I. K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 7, 073407, 02.2005.

Research output: Contribution to journalArticle

@article{6a6d0ded64ec4c5e85f3975ca129d092,
title = "Clustering of Au on the faulted half of the Si(111)-7 X 7 unit cell",
abstract = "We present a structure for Au deposited on the Si(111)-7 X 7 surface at very low coverage obtained by x-ray diffraction. We have found Au adsorbed exclusively on the faulted side of the Si(111)-7 X 7 unit cell. The Au atoms are found to reside in sites which lie above the Si and do not cause significant rearrangement of the covalent bonding network of the substrate, suggesting they are weakly bound. The sites have considerable disorder and can be modeled by a strongly anisotropic Debye-Waller factor. From this we extract the potential for interaction of Au with Si(111) 7 X 7, which is in reasonable agreement with theoretical predictions for Si and other species on Si(111) 7 X 7.",
author = "Ghose, {S. K.} and Peter Bennett and Robinson, {I. K.}",
year = "2005",
month = "2",
doi = "10.1103/PhysRevB.71.073407",
language = "English (US)",
volume = "71",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Clustering of Au on the faulted half of the Si(111)-7 X 7 unit cell

AU - Ghose, S. K.

AU - Bennett, Peter

AU - Robinson, I. K.

PY - 2005/2

Y1 - 2005/2

N2 - We present a structure for Au deposited on the Si(111)-7 X 7 surface at very low coverage obtained by x-ray diffraction. We have found Au adsorbed exclusively on the faulted side of the Si(111)-7 X 7 unit cell. The Au atoms are found to reside in sites which lie above the Si and do not cause significant rearrangement of the covalent bonding network of the substrate, suggesting they are weakly bound. The sites have considerable disorder and can be modeled by a strongly anisotropic Debye-Waller factor. From this we extract the potential for interaction of Au with Si(111) 7 X 7, which is in reasonable agreement with theoretical predictions for Si and other species on Si(111) 7 X 7.

AB - We present a structure for Au deposited on the Si(111)-7 X 7 surface at very low coverage obtained by x-ray diffraction. We have found Au adsorbed exclusively on the faulted side of the Si(111)-7 X 7 unit cell. The Au atoms are found to reside in sites which lie above the Si and do not cause significant rearrangement of the covalent bonding network of the substrate, suggesting they are weakly bound. The sites have considerable disorder and can be modeled by a strongly anisotropic Debye-Waller factor. From this we extract the potential for interaction of Au with Si(111) 7 X 7, which is in reasonable agreement with theoretical predictions for Si and other species on Si(111) 7 X 7.

UR - http://www.scopus.com/inward/record.url?scp=15744376506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15744376506&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.073407

DO - 10.1103/PhysRevB.71.073407

M3 - Article

AN - SCOPUS:15744376506

VL - 71

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 7

M1 - 073407

ER -