Clustering in ternary III-V semiconductors†

K. A. Jones, W. Porod, D. K. Ferry

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.

Original languageEnglish (US)
Pages (from-to)107-111
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume44
Issue number2
DOIs
StatePublished - 1983

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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