TY - JOUR
T1 - Clustering in ternary III-V semiconductors†
AU - Jones, K. A.
AU - Porod, W.
AU - Ferry, D. K.
N1 - Funding Information:
tThis work supported in part by the Office of Naval Research.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1983
Y1 - 1983
N2 - The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.
AB - The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.
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U2 - 10.1016/0022-3697(83)90156-7
DO - 10.1016/0022-3697(83)90156-7
M3 - Article
AN - SCOPUS:0020596229
VL - 44
SP - 107
EP - 111
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 2
ER -