Clustering in ternary III-V semiconductors†

K. A. Jones; W. Porod; D. K. Ferry

doi:10.1016/0022-3697(83)90156-7

Clustering in ternary III-V semiconductors†

K. A. Jones, W. Porod, D. K. Ferry

IAFSE-ECEE: Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.

Original language	English (US)
Pages (from-to)	107-111
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	44
Issue number	2
DOIs	https://doi.org/10.1016/0022-3697(83)90156-7
State	Published - 1983

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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AU - Porod, W.

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AB - The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.

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