Clustering in ternary III-V semiconductors†

K. A. Jones, W. Porod, D. K. Ferry

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.

Original languageEnglish (US)
Pages (from-to)107-111
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume44
Issue number2
DOIs
StatePublished - 1983
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Anions
Cations
Solid solutions
tendencies
Negative ions
Positive ions
antimonides
Thermodynamics
Kinetics
solid solutions
quantum wells
anions
cations
Temperature
thermodynamics
kinetics
temperature
III-V semiconductors
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Clustering in ternary III-V semiconductors†. / Jones, K. A.; Porod, W.; Ferry, D. K.

In: Journal of Physics and Chemistry of Solids, Vol. 44, No. 2, 1983, p. 107-111.

Research output: Contribution to journalArticle

Jones, K. A. ; Porod, W. ; Ferry, D. K. / Clustering in ternary III-V semiconductors†. In: Journal of Physics and Chemistry of Solids. 1983 ; Vol. 44, No. 2. pp. 107-111.
@article{f861b66c2cc24eba954cd8955d6f45d1,
title = "Clustering in ternary III-V semiconductors†",
abstract = "The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.",
author = "Jones, {K. A.} and W. Porod and Ferry, {D. K.}",
year = "1983",
doi = "10.1016/0022-3697(83)90156-7",
language = "English (US)",
volume = "44",
pages = "107--111",
journal = "Journal of Physics and Chemistry of Solids",
issn = "0022-3697",
publisher = "Elsevier Limited",
number = "2",

}

TY - JOUR

T1 - Clustering in ternary III-V semiconductors†

AU - Jones, K. A.

AU - Porod, W.

AU - Ferry, D. K.

PY - 1983

Y1 - 1983

N2 - The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.

AB - The difference between the bond probability between identical cations (anions) in a quasi-chemical and random solid solution is used as a quantitative measure of the tendency for clustering to occur in ternary III-V semiconductors. GaAlAs, GaAsP, InGaAs and InGaP are examined in some detail and the antimonides, InGaSb, InAsSb and GaAsSb, are discussed briefly. It is shown that the tendency to cluster increases more rapidly with increasing mole fraction than it does with decreasing temperature. It is also suggested that the segregation effects observed in GaAlAs in GaAs/GaAlAs quantum well structures is due to kinetic, as opposed to thermodynamic, effects.

UR - http://www.scopus.com/inward/record.url?scp=0020596229&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020596229&partnerID=8YFLogxK

U2 - 10.1016/0022-3697(83)90156-7

DO - 10.1016/0022-3697(83)90156-7

M3 - Article

AN - SCOPUS:0020596229

VL - 44

SP - 107

EP - 111

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

IS - 2

ER -