ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: Synthesis and fundamental studies

Jesse B. Tice, Andrew Chizmeshya, Radek Roucka, John Tolle, Brian Cherry, John Kouvetakis

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We describe the synthesis of a new family of chlorinated Si-Ge hydrides based on the formula ClnH6-nSiGe. Selectively controlled chlorination of H3SiGeH3 is provided by reactions with BCl3 to produce ClH2SiGeH3 (1) and Cl 2HSiGeH3 (2). This represents a viable single-step route to the target compounds in commercial yields for semiconductor applications. The built-in Cl functionalities are specifically designed to facilitate selective growth compatible with CMOS processing. Higher order polychlorinated derivatives such as Cl2SiHGeH2Cl (3), Cl2SiHGeHCl 2 (4), ClSiH2GeH2Cl (5), and ClSiH 2GeHCl2 (6) have also been produced for the first time leading to a new class of highly reactive Si-Ge compounds that are of fundamental and practical interest. Compounds 1-6 are characterized by physical and spectroscopic methods including NMR, FTIR, and mass spectroscopy. The results combined with first principles density functional theory are used to elucidate the structural, thermochemical, and vibrational trends throughout the general sequence of ClnH6-nSiGe and provide insight into the dependence of the reaction kinetics on Cl content in the products. The formation of 1 was also demonstrated by an alternative route based on the reaction of (SO3CF3)SiH2-GeH3 and CsCl. Depositions of 1 and 2 at very low temperatures (380-450°C) produce near stoichiometric SiGe films on Si exhibiting monocrystalline microstructures, smooth and continuous surface morphologies, reduced defect densities, and unusual strain properties.

Original languageEnglish (US)
Pages (from-to)7950-7960
Number of pages11
JournalJournal of the American Chemical Society
Volume129
Issue number25
DOIs
StatePublished - Jun 27 2007

Fingerprint

Semiconductors
Defect density
Chlorination
Halogenation
Fourier Transform Infrared Spectroscopy
Hydrides
Reaction kinetics
Density functional theory
Surface morphology
Mass Spectrometry
Magnetic Resonance Spectroscopy
Nuclear magnetic resonance
Spectroscopy
Semiconductor materials
Derivatives
Microstructure
Temperature
Growth
Processing
cesium chloride

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

ClnH6-nSiGe compounds for CMOS compatible semiconductor applications : Synthesis and fundamental studies. / Tice, Jesse B.; Chizmeshya, Andrew; Roucka, Radek; Tolle, John; Cherry, Brian; Kouvetakis, John.

In: Journal of the American Chemical Society, Vol. 129, No. 25, 27.06.2007, p. 7950-7960.

Research output: Contribution to journalArticle

@article{4df68c2cfdf042ad9f28bfe9e415f58e,
title = "ClnH6-nSiGe compounds for CMOS compatible semiconductor applications: Synthesis and fundamental studies",
abstract = "We describe the synthesis of a new family of chlorinated Si-Ge hydrides based on the formula ClnH6-nSiGe. Selectively controlled chlorination of H3SiGeH3 is provided by reactions with BCl3 to produce ClH2SiGeH3 (1) and Cl 2HSiGeH3 (2). This represents a viable single-step route to the target compounds in commercial yields for semiconductor applications. The built-in Cl functionalities are specifically designed to facilitate selective growth compatible with CMOS processing. Higher order polychlorinated derivatives such as Cl2SiHGeH2Cl (3), Cl2SiHGeHCl 2 (4), ClSiH2GeH2Cl (5), and ClSiH 2GeHCl2 (6) have also been produced for the first time leading to a new class of highly reactive Si-Ge compounds that are of fundamental and practical interest. Compounds 1-6 are characterized by physical and spectroscopic methods including NMR, FTIR, and mass spectroscopy. The results combined with first principles density functional theory are used to elucidate the structural, thermochemical, and vibrational trends throughout the general sequence of ClnH6-nSiGe and provide insight into the dependence of the reaction kinetics on Cl content in the products. The formation of 1 was also demonstrated by an alternative route based on the reaction of (SO3CF3)SiH2-GeH3 and CsCl. Depositions of 1 and 2 at very low temperatures (380-450°C) produce near stoichiometric SiGe films on Si exhibiting monocrystalline microstructures, smooth and continuous surface morphologies, reduced defect densities, and unusual strain properties.",
author = "Tice, {Jesse B.} and Andrew Chizmeshya and Radek Roucka and John Tolle and Brian Cherry and John Kouvetakis",
year = "2007",
month = "6",
day = "27",
doi = "10.1021/ja0713680",
language = "English (US)",
volume = "129",
pages = "7950--7960",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "25",

}

TY - JOUR

T1 - ClnH6-nSiGe compounds for CMOS compatible semiconductor applications

T2 - Synthesis and fundamental studies

AU - Tice, Jesse B.

AU - Chizmeshya, Andrew

AU - Roucka, Radek

AU - Tolle, John

AU - Cherry, Brian

AU - Kouvetakis, John

PY - 2007/6/27

Y1 - 2007/6/27

N2 - We describe the synthesis of a new family of chlorinated Si-Ge hydrides based on the formula ClnH6-nSiGe. Selectively controlled chlorination of H3SiGeH3 is provided by reactions with BCl3 to produce ClH2SiGeH3 (1) and Cl 2HSiGeH3 (2). This represents a viable single-step route to the target compounds in commercial yields for semiconductor applications. The built-in Cl functionalities are specifically designed to facilitate selective growth compatible with CMOS processing. Higher order polychlorinated derivatives such as Cl2SiHGeH2Cl (3), Cl2SiHGeHCl 2 (4), ClSiH2GeH2Cl (5), and ClSiH 2GeHCl2 (6) have also been produced for the first time leading to a new class of highly reactive Si-Ge compounds that are of fundamental and practical interest. Compounds 1-6 are characterized by physical and spectroscopic methods including NMR, FTIR, and mass spectroscopy. The results combined with first principles density functional theory are used to elucidate the structural, thermochemical, and vibrational trends throughout the general sequence of ClnH6-nSiGe and provide insight into the dependence of the reaction kinetics on Cl content in the products. The formation of 1 was also demonstrated by an alternative route based on the reaction of (SO3CF3)SiH2-GeH3 and CsCl. Depositions of 1 and 2 at very low temperatures (380-450°C) produce near stoichiometric SiGe films on Si exhibiting monocrystalline microstructures, smooth and continuous surface morphologies, reduced defect densities, and unusual strain properties.

AB - We describe the synthesis of a new family of chlorinated Si-Ge hydrides based on the formula ClnH6-nSiGe. Selectively controlled chlorination of H3SiGeH3 is provided by reactions with BCl3 to produce ClH2SiGeH3 (1) and Cl 2HSiGeH3 (2). This represents a viable single-step route to the target compounds in commercial yields for semiconductor applications. The built-in Cl functionalities are specifically designed to facilitate selective growth compatible with CMOS processing. Higher order polychlorinated derivatives such as Cl2SiHGeH2Cl (3), Cl2SiHGeHCl 2 (4), ClSiH2GeH2Cl (5), and ClSiH 2GeHCl2 (6) have also been produced for the first time leading to a new class of highly reactive Si-Ge compounds that are of fundamental and practical interest. Compounds 1-6 are characterized by physical and spectroscopic methods including NMR, FTIR, and mass spectroscopy. The results combined with first principles density functional theory are used to elucidate the structural, thermochemical, and vibrational trends throughout the general sequence of ClnH6-nSiGe and provide insight into the dependence of the reaction kinetics on Cl content in the products. The formation of 1 was also demonstrated by an alternative route based on the reaction of (SO3CF3)SiH2-GeH3 and CsCl. Depositions of 1 and 2 at very low temperatures (380-450°C) produce near stoichiometric SiGe films on Si exhibiting monocrystalline microstructures, smooth and continuous surface morphologies, reduced defect densities, and unusual strain properties.

UR - http://www.scopus.com/inward/record.url?scp=34347262585&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34347262585&partnerID=8YFLogxK

U2 - 10.1021/ja0713680

DO - 10.1021/ja0713680

M3 - Article

C2 - 17547404

AN - SCOPUS:34347262585

VL - 129

SP - 7950

EP - 7960

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 25

ER -