CIRCUIT SIMULATION OF POWER MOSFETS.

Francis Timmes, Darcy T. Dodt, Nadim Maluf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A device model suitable for circuit simulation programs is presented. This model accurately represents advanced-technology discrete power MOS transistors. The subcircuit model is implemented in any derivative of the SPICE 2 circuit simulator and consists of a depletion-mode JFET, an npn bipolar transistor, an enhancement-mode MOSFET, two diodes, and several passive elements. Combining an optimization program with the circuit simulator achieves agreement with measured static characteristics, such as first- and third-quadrant operation (including breakdown), and with dynamic characteristics, such as diode recovery, dV/dt turn-on, and switching waveforms. This technique eliminates the time-consuming and inaccurate sequential parameter extraction methods that are common to previous models. A library of parameter vectors for industry-standard power MOS devices is being created with this methodology.

Original languageEnglish (US)
Title of host publicationConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
PublisherIEEE
Pages393-395
Number of pages3
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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