CIRCUIT SIMULATION OF POWER MOSFETS.

Francis Timmes, Darcy T. Dodt, Nadim Maluf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A device model suitable for circuit simulation programs is presented. This model accurately represents advanced-technology discrete power MOS transistors. The subcircuit model is implemented in any derivative of the SPICE 2 circuit simulator and consists of a depletion-mode JFET, an npn bipolar transistor, an enhancement-mode MOSFET, two diodes, and several passive elements. Combining an optimization program with the circuit simulator achieves agreement with measured static characteristics, such as first- and third-quadrant operation (including breakdown), and with dynamic characteristics, such as diode recovery, dV/dt turn-on, and switching waveforms. This technique eliminates the time-consuming and inaccurate sequential parameter extraction methods that are common to previous models. A library of parameter vectors for industry-standard power MOS devices is being created with this methodology.

Original languageEnglish (US)
Title of host publicationConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
PublisherIEEE
Pages393-395
Number of pages3
StatePublished - 1986
Externally publishedYes

Fingerprint

Circuit simulation
Diodes
Simulators
Junction gate field effect transistors
Parameter extraction
MOS devices
Networks (circuits)
Bipolar transistors
MOSFET devices
SPICE
Derivatives
Recovery
Industry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Timmes, F., Dodt, D. T., & Maluf, N. (1986). CIRCUIT SIMULATION OF POWER MOSFETS. In Conference Record - IAS Annual Meeting (IEEE Industry Applications Society) (pp. 393-395). IEEE.

CIRCUIT SIMULATION OF POWER MOSFETS. / Timmes, Francis; Dodt, Darcy T.; Maluf, Nadim.

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). IEEE, 1986. p. 393-395.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Timmes, F, Dodt, DT & Maluf, N 1986, CIRCUIT SIMULATION OF POWER MOSFETS. in Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). IEEE, pp. 393-395.
Timmes F, Dodt DT, Maluf N. CIRCUIT SIMULATION OF POWER MOSFETS. In Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). IEEE. 1986. p. 393-395
Timmes, Francis ; Dodt, Darcy T. ; Maluf, Nadim. / CIRCUIT SIMULATION OF POWER MOSFETS. Conference Record - IAS Annual Meeting (IEEE Industry Applications Society). IEEE, 1986. pp. 393-395
@inproceedings{856cc0ddefde4a998413b7e4f1d5a632,
title = "CIRCUIT SIMULATION OF POWER MOSFETS.",
abstract = "A device model suitable for circuit simulation programs is presented. This model accurately represents advanced-technology discrete power MOS transistors. The subcircuit model is implemented in any derivative of the SPICE 2 circuit simulator and consists of a depletion-mode JFET, an npn bipolar transistor, an enhancement-mode MOSFET, two diodes, and several passive elements. Combining an optimization program with the circuit simulator achieves agreement with measured static characteristics, such as first- and third-quadrant operation (including breakdown), and with dynamic characteristics, such as diode recovery, dV/dt turn-on, and switching waveforms. This technique eliminates the time-consuming and inaccurate sequential parameter extraction methods that are common to previous models. A library of parameter vectors for industry-standard power MOS devices is being created with this methodology.",
author = "Francis Timmes and Dodt, {Darcy T.} and Nadim Maluf",
year = "1986",
language = "English (US)",
pages = "393--395",
booktitle = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",
publisher = "IEEE",

}

TY - GEN

T1 - CIRCUIT SIMULATION OF POWER MOSFETS.

AU - Timmes, Francis

AU - Dodt, Darcy T.

AU - Maluf, Nadim

PY - 1986

Y1 - 1986

N2 - A device model suitable for circuit simulation programs is presented. This model accurately represents advanced-technology discrete power MOS transistors. The subcircuit model is implemented in any derivative of the SPICE 2 circuit simulator and consists of a depletion-mode JFET, an npn bipolar transistor, an enhancement-mode MOSFET, two diodes, and several passive elements. Combining an optimization program with the circuit simulator achieves agreement with measured static characteristics, such as first- and third-quadrant operation (including breakdown), and with dynamic characteristics, such as diode recovery, dV/dt turn-on, and switching waveforms. This technique eliminates the time-consuming and inaccurate sequential parameter extraction methods that are common to previous models. A library of parameter vectors for industry-standard power MOS devices is being created with this methodology.

AB - A device model suitable for circuit simulation programs is presented. This model accurately represents advanced-technology discrete power MOS transistors. The subcircuit model is implemented in any derivative of the SPICE 2 circuit simulator and consists of a depletion-mode JFET, an npn bipolar transistor, an enhancement-mode MOSFET, two diodes, and several passive elements. Combining an optimization program with the circuit simulator achieves agreement with measured static characteristics, such as first- and third-quadrant operation (including breakdown), and with dynamic characteristics, such as diode recovery, dV/dt turn-on, and switching waveforms. This technique eliminates the time-consuming and inaccurate sequential parameter extraction methods that are common to previous models. A library of parameter vectors for industry-standard power MOS devices is being created with this methodology.

UR - http://www.scopus.com/inward/record.url?scp=0022886939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022886939&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022886939

SP - 393

EP - 395

BT - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

PB - IEEE

ER -