TY - JOUR
T1 - Circuit-level impact of a-Si:H thin-film-transistor degradation effects
AU - Allee, David
AU - Clark, Lawrence T.
AU - Vogt, Bryan D.
AU - Shringarpure, Rahul
AU - Venugopal, Sameer M.
AU - Uppili, Shrinivas Gopalan
AU - Kaftanoglu, Korhan
AU - Shivalingaiah, Hemanth
AU - Li, Zi P.
AU - Fernando, J. J Ravindra
AU - Bawolek, Edward J.
AU - O'Rourke, Shawn M.
N1 - Funding Information:
Manuscript received July 29, 2008; revised February 3, 2009. Current version published May 20, 2009. This work was supported by the Army Research Laboratory (ARL) under Cooperative Agreement W911NG-04-2-0005. The review of this paper was arranged by Editor J. Suehle.
PY - 2009
Y1 - 2009
N2 - This paper reviews amorphous silicon thin-film-transistor (TFT) degradation with electrical stress, examining the implications for various types of circuitry. Experimental measurements on active-matrix backplanes, integrated a-Si:H column drivers, and a-Si:H digital circuitry are performed. Circuit modeling that enables the prediction of complex-circuit degradation is described. The similarity of degradation in amorphous silicon to negative bias temperature instability in crystalline PMOS FETs is discussed as well as approaches in reducing the TFT degradation effects. Experimental electrical-stress-induced degradation results in controlled humidity environments are also presented.
AB - This paper reviews amorphous silicon thin-film-transistor (TFT) degradation with electrical stress, examining the implications for various types of circuitry. Experimental measurements on active-matrix backplanes, integrated a-Si:H column drivers, and a-Si:H digital circuitry are performed. Circuit modeling that enables the prediction of complex-circuit degradation is described. The similarity of degradation in amorphous silicon to negative bias temperature instability in crystalline PMOS FETs is discussed as well as approaches in reducing the TFT degradation effects. Experimental electrical-stress-induced degradation results in controlled humidity environments are also presented.
KW - Amorphous silicon
KW - Flexible electronics
KW - Thin-film transistors (TFTs)
KW - Threshold-voltage shift
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U2 - 10.1109/TED.2009.2019387
DO - 10.1109/TED.2009.2019387
M3 - Review article
AN - SCOPUS:66949115338
SN - 0018-9383
VL - 56
SP - 1166
EP - 1176
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -