Circuit-level impact of a-Si: H thin-film-transistor degradation effects

David Allee, Lawrence T. Clark, Bryan D. Vogt, Rahul Shringarpure, Sameer M. Venugopal, Shrinivas Gopalan Uppili, Korhan Kaftanoglu, Hemanth Shivalingaiah, Zi P. Li, J. J Ravindra Fernando, Edward J. Bawolek, Shawn M. O'Rourke

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

This paper reviews amorphous silicon thin-film-transistor (TFT) degradation with electrical stress, examining the implications for various types of circuitry. Experimental measurements on active-matrix backplanes, integrated a-Si:H column drivers, and a-Si:H digital circuitry are performed. Circuit modeling that enables the prediction of complex-circuit degradation is described. The similarity of degradation in amorphous silicon to negative bias temperature instability in crystalline PMOS FETs is discussed as well as approaches in reducing the TFT degradation effects. Experimental electrical-stress-induced degradation results in controlled humidity environments are also presented.

Original languageEnglish (US)
Pages (from-to)1166-1176
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume56
Issue number6
DOIs
StatePublished - 2009

Fingerprint

Thin film transistors
Degradation
Networks (circuits)
Amorphous silicon
Field effect transistors
Atmospheric humidity
Crystalline materials

Keywords

  • Amorphous silicon
  • Flexible electronics
  • Thin-film transistors (TFTs)
  • Threshold-voltage shift

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Allee, D., Clark, L. T., Vogt, B. D., Shringarpure, R., Venugopal, S. M., Uppili, S. G., ... O'Rourke, S. M. (2009). Circuit-level impact of a-Si: H thin-film-transistor degradation effects. IEEE Transactions on Electron Devices, 56(6), 1166-1176. https://doi.org/10.1109/TED.2009.2019387

Circuit-level impact of a-Si : H thin-film-transistor degradation effects. / Allee, David; Clark, Lawrence T.; Vogt, Bryan D.; Shringarpure, Rahul; Venugopal, Sameer M.; Uppili, Shrinivas Gopalan; Kaftanoglu, Korhan; Shivalingaiah, Hemanth; Li, Zi P.; Fernando, J. J Ravindra; Bawolek, Edward J.; O'Rourke, Shawn M.

In: IEEE Transactions on Electron Devices, Vol. 56, No. 6, 2009, p. 1166-1176.

Research output: Contribution to journalArticle

Allee, D, Clark, LT, Vogt, BD, Shringarpure, R, Venugopal, SM, Uppili, SG, Kaftanoglu, K, Shivalingaiah, H, Li, ZP, Fernando, JJR, Bawolek, EJ & O'Rourke, SM 2009, 'Circuit-level impact of a-Si: H thin-film-transistor degradation effects', IEEE Transactions on Electron Devices, vol. 56, no. 6, pp. 1166-1176. https://doi.org/10.1109/TED.2009.2019387
Allee, David ; Clark, Lawrence T. ; Vogt, Bryan D. ; Shringarpure, Rahul ; Venugopal, Sameer M. ; Uppili, Shrinivas Gopalan ; Kaftanoglu, Korhan ; Shivalingaiah, Hemanth ; Li, Zi P. ; Fernando, J. J Ravindra ; Bawolek, Edward J. ; O'Rourke, Shawn M. / Circuit-level impact of a-Si : H thin-film-transistor degradation effects. In: IEEE Transactions on Electron Devices. 2009 ; Vol. 56, No. 6. pp. 1166-1176.
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