Circuit-level delay modeling considering both TDDB and NBTI

Hong Luo, Xiaoming Chen, Jyothi Velamala, Yu Wang, Yu Cao, Vikas Chandra, Yuchun Ma, Huazhong Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

With aggressive scaling down of the technology node, the time-dependent dielectric breakdown (TDDB) and negative biased temperature instability (NBTI) are becoming key challenges for circuit designers. Both TDDB and NBTI significantly degrade the electrical characteristic of the CMOS devices. A delay model considering TDDB and NBTI is proposed in this paper. The output degradation of the breakdown gate is considered in circuit-level delay analysis. Traditionally, it is considered the TDDB degradation always degrades the circuit delay. However, this paper shows the TDDB effect may boost up the circuit speed. The spatial correlation of TDDB effect is also demonstrated in this paper and shows the difference of 40% in circuit delay depending on the location of the breakdown gate in the signal path.

Original languageEnglish (US)
Title of host publicationProceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
Pages14-21
Number of pages8
DOIs
StatePublished - Jun 22 2011
Event12th International Symposium on Quality Electronic Design, ISQED 2011 - Santa Clara, CA, United States
Duration: Mar 14 2011Mar 16 2011

Publication series

NameProceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011

Other

Other12th International Symposium on Quality Electronic Design, ISQED 2011
CountryUnited States
CitySanta Clara, CA
Period3/14/113/16/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Luo, H., Chen, X., Velamala, J., Wang, Y., Cao, Y., Chandra, V., Ma, Y., & Yang, H. (2011). Circuit-level delay modeling considering both TDDB and NBTI. In Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011 (pp. 14-21). [5770697] (Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011). https://doi.org/10.1109/ISQED.2011.5770697