Abstract
Low-power circuit operations, such as dynamic voltage scaling and the sleep mode, pose a unique challenge to aging prediction. Traditional aging models assume constant voltage and averaged activity factor, ignoring the impact of the long sleep period, and thus, result in a significant overestimation of the degradation rate. To accurately predict the aging effect in low-power design, this work first examines critical model assumptions in the reaction-diffusion process that is responsible for the NBTI effect. By using the correct diffusion profile, it then proposes a new aging model that effectively analyzes the degradation under various low-power operations. The new model well predicts the aging behavior of scaled CMOS measurement data (45nm and 65nm) with different operation patterns, especially sleep mode operation and dynamic voltage scaling. Compared to previous aging models, the new result captures the essential role of the long recovery phase in circuit aging, reducing unnecessary guardbanding in reliability protection.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the Custom Integrated Circuits Conference |
| Pages | 427-430 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 2009 |
| Event | 2009 IEEE Custom Integrated Circuits Conference, CICC '09 - San Jose, CA, United States Duration: Sep 13 2009 → Sep 16 2009 |
Other
| Other | 2009 IEEE Custom Integrated Circuits Conference, CICC '09 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 9/13/09 → 9/16/09 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Circuit aging prediction for low-power operation. / Zheng, Rui; Velamala, Jyothi; Reddy, Vijay; Balakrishnan, Varsha; Mintarno, Evelyn; Mitra, Subhasish; Krishnan, Srikanth; Cao, Yu.
Proceedings of the Custom Integrated Circuits Conference. 2009. p. 427-430 5280814.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Circuit aging prediction for low-power operation
AU - Zheng, Rui
AU - Velamala, Jyothi
AU - Reddy, Vijay
AU - Balakrishnan, Varsha
AU - Mintarno, Evelyn
AU - Mitra, Subhasish
AU - Krishnan, Srikanth
AU - Cao, Yu
PY - 2009
Y1 - 2009
N2 - Low-power circuit operations, such as dynamic voltage scaling and the sleep mode, pose a unique challenge to aging prediction. Traditional aging models assume constant voltage and averaged activity factor, ignoring the impact of the long sleep period, and thus, result in a significant overestimation of the degradation rate. To accurately predict the aging effect in low-power design, this work first examines critical model assumptions in the reaction-diffusion process that is responsible for the NBTI effect. By using the correct diffusion profile, it then proposes a new aging model that effectively analyzes the degradation under various low-power operations. The new model well predicts the aging behavior of scaled CMOS measurement data (45nm and 65nm) with different operation patterns, especially sleep mode operation and dynamic voltage scaling. Compared to previous aging models, the new result captures the essential role of the long recovery phase in circuit aging, reducing unnecessary guardbanding in reliability protection.
AB - Low-power circuit operations, such as dynamic voltage scaling and the sleep mode, pose a unique challenge to aging prediction. Traditional aging models assume constant voltage and averaged activity factor, ignoring the impact of the long sleep period, and thus, result in a significant overestimation of the degradation rate. To accurately predict the aging effect in low-power design, this work first examines critical model assumptions in the reaction-diffusion process that is responsible for the NBTI effect. By using the correct diffusion profile, it then proposes a new aging model that effectively analyzes the degradation under various low-power operations. The new model well predicts the aging behavior of scaled CMOS measurement data (45nm and 65nm) with different operation patterns, especially sleep mode operation and dynamic voltage scaling. Compared to previous aging models, the new result captures the essential role of the long recovery phase in circuit aging, reducing unnecessary guardbanding in reliability protection.
UR - http://www.scopus.com/inward/record.url?scp=74049160392&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=74049160392&partnerID=8YFLogxK
U2 - 10.1109/CICC.2009.5280814
DO - 10.1109/CICC.2009.5280814
M3 - Conference contribution
SN - 9781424440726
SP - 427
EP - 430
BT - Proceedings of the Custom Integrated Circuits Conference
ER -