Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

Engineering & Materials Science

• Photoelectron spectroscopy 100%
• High resolution transmission electron microscopy 95%
• Ohmic contacts 88%
• Electron beams 69%
• Cobalt 67%
• Silicon carbide 63%
• Leakage currents 63%
• Electric properties 62%
• Evaporation 58%
• Annealing 58%
• Graphite 58%
• Thin films 55%
• X rays 53%
• Defects 40%
• Microstructure 39%

Physics & Astronomy

• x ray spectroscopy 59%
• silicon carbides 56%
• cobalt 54%
• electric contacts 51%
• chemistry 50%
• graphite 50%
• leakage 48%
• photoelectron spectroscopy 48%
• evaporation 44%
• wafers 44%
• electrical properties 43%
• electron beams 41%
• transmission electron microscopy 38%
• high resolution 35%
• annealing 35%
• microstructure 34%
• defects 32%
• thin films 30%

Chemical Compounds

• Point Group C∞V 93%
• Electron Beam Evaporation 90%
• Leakage Current 77%
• Silicon Carbide 65%
• Photoelectron Spectroscopy 58%
• Electrical Property 49%
• Annealing 46%
• Graphite 43%
• Microstructure 39%
• Chemistry 34%