Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

L. M. Porter, R. F. Davis, J. S. Bow, M. J. Kim, Ray Carpenter

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n 1.06 and 2.0 X 10-8 A/cm2 at -10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Original languageEnglish (US)
Pages (from-to)26-33
Number of pages8
JournalJournal of Materials Research
Volume10
Issue number1
DOIs
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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