Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)

L. M. Porter, R. F. Davis, J. S. Bow, M. J. Kim, Ray Carpenter

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Thin films (4-1000 angstroms) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n<1.1) and leakage currents of 5×10-8 A/cm2 at -10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2×10-8 A/cm2 at -10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.

Original languageEnglish (US)
Pages (from-to)2336-2342
Number of pages7
JournalJournal of Materials Research
Volume10
Issue number9
StatePublished - Sep 1995

Fingerprint

Platinum
Silicon carbide
silicon carbides
Electric properties
platinum
leakage
electrical properties
chemistry
Leakage currents
Thin films
microstructure
Microstructure
annealing
thin films
Annealing
precipitates
evaporation
electron beams
Surface chemistry
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001). / Porter, L. M.; Davis, R. F.; Bow, J. S.; Kim, M. J.; Carpenter, Ray.

In: Journal of Materials Research, Vol. 10, No. 9, 09.1995, p. 2336-2342.

Research output: Contribution to journalArticle

@article{078289918e5e4e85b8558c80c18e008f,
title = "Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)",
abstract = "Thin films (4-1000 angstroms) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n<1.1) and leakage currents of 5×10-8 A/cm2 at -10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2×10-8 A/cm2 at -10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.",
author = "Porter, {L. M.} and Davis, {R. F.} and Bow, {J. S.} and Kim, {M. J.} and Ray Carpenter",
year = "1995",
month = "9",
language = "English (US)",
volume = "10",
pages = "2336--2342",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "9",

}

TY - JOUR

T1 - Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)

AU - Porter, L. M.

AU - Davis, R. F.

AU - Bow, J. S.

AU - Kim, M. J.

AU - Carpenter, Ray

PY - 1995/9

Y1 - 1995/9

N2 - Thin films (4-1000 angstroms) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n<1.1) and leakage currents of 5×10-8 A/cm2 at -10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2×10-8 A/cm2 at -10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.

AB - Thin films (4-1000 angstroms) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n<1.1) and leakage currents of 5×10-8 A/cm2 at -10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2×10-8 A/cm2 at -10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.

UR - http://www.scopus.com/inward/record.url?scp=0029379188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029379188&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029379188

VL - 10

SP - 2336

EP - 2342

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 9

ER -