Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)

L. M. Porter, R. F. Davis, J. S. Bow, M. J. Kim, Ray Carpenter

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Thin films (4-1000 Å) of Pt were deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type α (6H)-SiC(0001) substrates and examined in terms of chemistry, microstructure, and electrical properties. The as-deposited contacts were polycrystalline and showed excellent rectifying behavior with low ideality factors (n < 1.1) and leakage currents of 5 × 10–8 A/cm2 at —10 V. The Schottky barrier height increased from 1.06 eV before annealing to 1.26 eV after successive 20 min anneals at 450, 550, 650, and 750 °C. In addition, the leakage currents decreased to 2 × 10™8 A/cm2 at —10 V. Interfacial reactions were not observed at annealing temperatures below 750 °C; above this temperature, Pt2Si and C precipitates were identified in the reaction zone.

Original languageEnglish (US)
Pages (from-to)2336-2342
Number of pages7
JournalJournal of Materials Research
Volume10
Issue number9
DOIs
StatePublished - Sep 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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