Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

V. J. Keast, J. Bruley, Peter Rez, J. M. Maclaren, D. B. Williams

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.

Original languageEnglish (US)
Pages (from-to)481-490
Number of pages10
JournalActa Materialia
Volume46
Issue number2
StatePublished - Jan 1 1998

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Embrittlement
Grain boundaries
Alloying elements
Electronic structure
Energy dissipation
Impurities
Atoms
Electrons

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

Cite this

Keast, V. J., Bruley, J., Rez, P., Maclaren, J. M., & Williams, D. B. (1998). Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu. Acta Materialia, 46(2), 481-490.

Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu. / Keast, V. J.; Bruley, J.; Rez, Peter; Maclaren, J. M.; Williams, D. B.

In: Acta Materialia, Vol. 46, No. 2, 01.01.1998, p. 481-490.

Research output: Contribution to journalArticle

Keast, VJ, Bruley, J, Rez, P, Maclaren, JM & Williams, DB 1998, 'Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu', Acta Materialia, vol. 46, no. 2, pp. 481-490.
Keast, V. J. ; Bruley, J. ; Rez, Peter ; Maclaren, J. M. ; Williams, D. B. / Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu. In: Acta Materialia. 1998 ; Vol. 46, No. 2. pp. 481-490.
@article{d10404fa1cfe42458fcabee7d9e72673,
title = "Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu",
abstract = "Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.",
author = "Keast, {V. J.} and J. Bruley and Peter Rez and Maclaren, {J. M.} and Williams, {D. B.}",
year = "1998",
month = "1",
day = "1",
language = "English (US)",
volume = "46",
pages = "481--490",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",
number = "2",

}

TY - JOUR

T1 - Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

AU - Keast, V. J.

AU - Bruley, J.

AU - Rez, Peter

AU - Maclaren, J. M.

AU - Williams, D. B.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.

AB - Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.

UR - http://www.scopus.com/inward/record.url?scp=0032484331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032484331&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032484331

VL - 46

SP - 481

EP - 490

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 2

ER -