Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

V. J. Keast; J. Bruley; Peter Rez; J. M. Maclaren; D. B. Williams

doi:10.1016/S1359-6454(97)00262-0

Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

V. J. Keast, J. Bruley, Peter Rez, J. M. Maclaren, D. B. Williams

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Abstract

Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.

Original language	English (US)
Pages (from-to)	481-490
Number of pages	10
Journal	Acta Materialia
Volume	46
Issue number	2
DOIs	https://doi.org/10.1016/S1359-6454(97)00262-0
State	Published - Jan 1 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

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title = "Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu",

abstract = "Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.",

author = "Keast, {V. J.} and J. Bruley and Peter Rez and Maclaren, {J. M.} and Williams, {D. B.}",

note = "Funding Information: The financial support of NSF (DMR 93 05253) for the work at Lehigh is gratefully acknowledged. JMR was supported at Tulane through a DoE-EPSCoR grant DoE-LEQSF (1993-95)-03. Many helpful discussions took place with D. A. Muller, and R. Alani of Gatan Inc. gave significant assistance with specimen preparation. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "1998",

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doi = "10.1016/S1359-6454(97)00262-0",

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T1 - Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

AU - Keast, V. J.

AU - Bruley, J.

AU - Rez, Peter

AU - Maclaren, J. M.

AU - Williams, D. B.

N1 - Funding Information: The financial support of NSF (DMR 93 05253) for the work at Lehigh is gratefully acknowledged. JMR was supported at Tulane through a DoE-EPSCoR grant DoE-LEQSF (1993-95)-03. Many helpful discussions took place with D. A. Muller, and R. Alani of Gatan Inc. gave significant assistance with specimen preparation. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.

AB - Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.

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EP - 490

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 2

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Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu

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