Abstract
Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 481-490 |
| Number of pages | 10 |
| Journal | Acta Materialia |
| Volume | 46 |
| Issue number | 2 |
| State | Published - Jan 1 1998 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Metals and Alloys
Cite this
Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu. / Keast, V. J.; Bruley, J.; Rez, Peter; Maclaren, J. M.; Williams, D. B.
In: Acta Materialia, Vol. 46, No. 2, 01.01.1998, p. 481-490.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Chemistry and bonding changes associated with the segregation of Bi to grain boundaries in Cu
AU - Keast, V. J.
AU - Bruley, J.
AU - Rez, Peter
AU - Maclaren, J. M.
AU - Williams, D. B.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.
AB - Grain-boundary embrittlement, caused by the segregation of impurity and alloying elements, occurs in many systems and has been the focus of a large amount of research owing to its technological importance. However, the exact mechanism by which the segregating elements cause embrittlement remains unclear. In this paper the localized changes in the electronic structure in the classical embrittling system of Bi in Cu have been studied. Experimental results were obtained by examining the fine structure in the electron energy loss spectrum which was then compared to calculations using the layer Korringa-Kohn-Rostoker (LKKR) method. A change in the d density of states has been observed for the Cu atoms at the grain boundary, associated with Bi, and an electronic model to explain embrittlement is described.
UR - http://www.scopus.com/inward/record.url?scp=0032484331&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032484331&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032484331
VL - 46
SP - 481
EP - 490
JO - Acta Materialia
JF - Acta Materialia
SN - 1359-6454
IS - 2
ER -