Chemical vapor deposition synthesis of N-, P-, and Si-doped single-walled carbon nanotubes

Jessica Campos-Delgado, Indhira O. Maciel, David A. Cullen, David Smith, Ado Jorio, Marcos A. Pimenta, Humberto Terrones, Mauricio Terrones

Research output: Contribution to journalArticlepeer-review

110 Scopus citations


Here we report the synthesis of single-walled carbon nanotube bundles by chemical vapor deposition in the presence of electron donor elements (N, P, and Si). In order to introduce each dopant into the graphitic carbon lattice, different precursors containing the doping elements (benzylamine, pyrazine, triphenylphosphine, and methoxytrimethylsilane) were added at various concentrations into ethanol/ferrocene solutions. The synthesized nanotubes and byproduct were characterized by electron microscopy and Raman spectroscopy. Our results reveal intrinsic structural and electronic differences for the N-, P-, and Si-doped nanotubes. These tubes can now be tested for the fabrication of electronic nanodevices, and their performance can be observed.

Original languageEnglish (US)
Pages (from-to)1696-1702
Number of pages7
JournalACS nano
Issue number3
StatePublished - Mar 23 2010


  • Doping
  • Nitrogen
  • Phosphorus
  • SWNTs
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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