Chemical vapor deposition of gallium nitride from diethylgallium azide

John Kouvetakis, David B. Beach

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

Pyrolysis of diethylgallium azide in a conventional hot-wall chemical vapor deposition reactor at 350 °C followed by in situ annealing at 600°C results in gallium nitride films. Film purity has been determined by electron microprobe, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films are stoichiometric GaN, with carbon and oxygen content below 2%. Film structure has been examined by X-ray diffraction and by scanning and transmission electron microscopy. The films are polycrystallme and show diffraction patterns characteristic of the expected hexagonal wurtzite structure. Mass spectroscopic analysis of the product gases suggests the films are formed by successive β-hydride eliminations of ethylene from the ethyl groups and loss of nitrogen from the azide. The effect of annealing, as studied by infrared spectroscopy, is the loss of hydrogen from the film with a concomitant increase in gallium-nitrogen bonding.

Original languageEnglish (US)
Pages (from-to)476-478
Number of pages3
JournalChemistry of Materials
Volume1
Issue number4
StatePublished - 1989
Externally publishedYes

Fingerprint

Gallium nitride
Azides
Chemical vapor deposition
Nitrogen
Annealing
Gallium
Spectroscopic analysis
Rutherford backscattering spectroscopy
Auger electron spectroscopy
gallium nitride
Hydrides
Diffraction patterns
Hydrogen
Infrared spectroscopy
Ethylene
Pyrolysis
Carbon
Gases
Oxygen
Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

Cite this

Chemical vapor deposition of gallium nitride from diethylgallium azide. / Kouvetakis, John; Beach, David B.

In: Chemistry of Materials, Vol. 1, No. 4, 1989, p. 476-478.

Research output: Contribution to journalArticle

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