Chemical routes to GeSi (100) structures for low temperature Si-based semiconductor applications

M. A. Wistey, Y. Y. Fang, J. Tolle, Andrew Chizmeshya, John Kouvetakis

Research output: Contribution to journalArticle

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Abstract

The authors describe very low temperature (350-420 °C) growth of atomically smooth Ge films (0.2-0.4 nm roughness) directly on Si(100) via gas-source molecular beam epitaxy. A carefully tuned admixture of (Ge H3) 2 C H2, possessing unique pseudosurfactant properties, and conventional Ge2 H6 provides unprecedented control of film microstructure, morphology, and composition. Formation of edge dislocations at the interface ensures growth of virtually relaxed monocrystalline Ge films (∼40-1000 nm thick) with a threading dislocation density less than 105 cm-2 as determined by etch pit measurements. Secondary ion mass spectroscopy showed no measurable carbon incorporation indicating that C desorbs as C H4, consistent with calculated chemisorption energies.

Original languageEnglish (US)
Article number082108
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
StatePublished - 2007

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routes
edge dislocations
admixtures
chemisorption
molecular beam epitaxy
roughness
mass spectroscopy
microstructure
carbon
gases
ions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chemical routes to GeSi (100) structures for low temperature Si-based semiconductor applications. / Wistey, M. A.; Fang, Y. Y.; Tolle, J.; Chizmeshya, Andrew; Kouvetakis, John.

In: Applied Physics Letters, Vol. 90, No. 8, 082108, 2007.

Research output: Contribution to journalArticle

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