Chemical imaging of InGaAs/InAlAs quantum wells

G. Mountjoy, Peter Crozier, P. L. Fejes, R. K. Tsui, G. D. Kramer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAlAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 angstroms layers of InGaAs separated by 20 angstroms of InAlAs. For this (InGa) x(InAl) 1-xAs system, we have been able to obtain compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/2×1/2 unit cell. The results clearly show irregularities on a monatomic scale.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages57-62
Number of pages6
Volume466
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 3 1996Dec 5 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/3/9612/5/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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