Abstract
We have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAlAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 angstroms layers of InGaAs separated by 20 angstroms of InAlAs. For this (InGa) x(InAl) 1-xAs system, we have been able to obtain compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/2×1/2 unit cell. The results clearly show irregularities on a monatomic scale.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | MRS |
Pages | 57-62 |
Number of pages | 6 |
Volume | 466 |
State | Published - 1997 |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 3 1996 → Dec 5 1996 |
Other
Other | Proceedings of the 1996 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 12/3/96 → 12/5/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials