Chemical and electrical mechanisms in titanium, platinum, and hafnium contacts to alpha (6H) silicon carbide

L. M. Porter, R. C. Glass, R. F. Davis, J. S. Bow, M. J. Kim, R. W. Carpenter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Thin films (2 angstroms-1000 angstroms) of titanium, platinum, and hafnium were deposited via UHV electron beam evaporation at room temperature on n-type, (0001) alpha (6H)-SiC and compared in terms of interfacial chemistry, energy barriers to electrical conduction, and macroscopic electrical behavior. Current-voltage measurements have shown that these contacts are rectifying, all with ideality factors between 1.01 and 1.09. The lowest leakage currents (approximately 5×10-8 A/cm2 at -10 V) were determined for unannealed Pt contacts and for Hf contacts annealed at 700 °C for 20 minutes. Current-voltage (I-V), capacitance-voltage (C-V), and x-ray photoelectron spectroscopy (XPS) were among the techniques used to determine barrier heights, all of which were within a few tenths of an electron volt of 1.0 eV. The narrow range of calculated barrier heights along with the XPS valence spectrum of the chemically prepared SiC surface give evidence that the Fermi level is pinned at the semiconductor surface.

Original languageEnglish (US)
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages471-477
Number of pages7
ISBN (Print)1558991778
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Porter, L. M., Glass, R. C., Davis, R. F., Bow, J. S., Kim, M. J., & Carpenter, R. W. (1993). Chemical and electrical mechanisms in titanium, platinum, and hafnium contacts to alpha (6H) silicon carbide. In Chemical Perspectives of Microelectronic Materials III (pp. 471-477). (Materials Research Society Symposium Proceedings; Vol. 282). Publ by Materials Research Society.