TY - GEN
T1 - Chemical and electrical mechanisms in titanium, platinum, and hafnium contacts to alpha (6H) silicon carbide
AU - Porter, L. M.
AU - Glass, R. C.
AU - Davis, R. F.
AU - Bow, J. S.
AU - Kim, M. J.
AU - Carpenter, R. W.
PY - 1993
Y1 - 1993
N2 - Thin films (2 angstroms-1000 angstroms) of titanium, platinum, and hafnium were deposited via UHV electron beam evaporation at room temperature on n-type, (0001) alpha (6H)-SiC and compared in terms of interfacial chemistry, energy barriers to electrical conduction, and macroscopic electrical behavior. Current-voltage measurements have shown that these contacts are rectifying, all with ideality factors between 1.01 and 1.09. The lowest leakage currents (approximately 5×10-8 A/cm2 at -10 V) were determined for unannealed Pt contacts and for Hf contacts annealed at 700 °C for 20 minutes. Current-voltage (I-V), capacitance-voltage (C-V), and x-ray photoelectron spectroscopy (XPS) were among the techniques used to determine barrier heights, all of which were within a few tenths of an electron volt of 1.0 eV. The narrow range of calculated barrier heights along with the XPS valence spectrum of the chemically prepared SiC surface give evidence that the Fermi level is pinned at the semiconductor surface.
AB - Thin films (2 angstroms-1000 angstroms) of titanium, platinum, and hafnium were deposited via UHV electron beam evaporation at room temperature on n-type, (0001) alpha (6H)-SiC and compared in terms of interfacial chemistry, energy barriers to electrical conduction, and macroscopic electrical behavior. Current-voltage measurements have shown that these contacts are rectifying, all with ideality factors between 1.01 and 1.09. The lowest leakage currents (approximately 5×10-8 A/cm2 at -10 V) were determined for unannealed Pt contacts and for Hf contacts annealed at 700 °C for 20 minutes. Current-voltage (I-V), capacitance-voltage (C-V), and x-ray photoelectron spectroscopy (XPS) were among the techniques used to determine barrier heights, all of which were within a few tenths of an electron volt of 1.0 eV. The narrow range of calculated barrier heights along with the XPS valence spectrum of the chemically prepared SiC surface give evidence that the Fermi level is pinned at the semiconductor surface.
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M3 - Conference contribution
AN - SCOPUS:0027245348
SN - 1558991778
T3 - Materials Research Society Symposium Proceedings
SP - 471
EP - 477
BT - Chemical Perspectives of Microelectronic Materials III
PB - Publ by Materials Research Society
T2 - Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
Y2 - 30 November 1992 through 3 December 1992
ER -