Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

Ivan S. Esqueda, Cory D. Cress, Yuchi Che, Yu Cao, Chongwu Zhou

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The effects of near-interfacial trapping induced by ionizing radiation exposure of aligned single-walled carbon nanotube (SWCNT) arrays are investigated via measurements of gate hysteresis in the transfer characteristics of aligned SWCNT field-effect transistors. Gate hysteresis is attributed to charge injection (i.e., trapping) from the SWCNTs into radiation-induced traps in regions near the SWCNT/dielectric interface. Self-consistent calculations of surface-potential, carrier density, and trapped charge are used to describe hysteresis as a function of ionizing radiation exposure. Hysteresis width (h) and its dependence on gate sweep range are investigated analytically. The effects of non-uniform trap energy distributions on the relationship between hysteresis, gate sweep range, and total ionizing dose are demonstrated with simulations and verified experimentally.

Original languageEnglish (US)
Article number054506
JournalJournal of Applied Physics
Volume115
Issue number5
DOIs
StatePublished - Jan 1 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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