Abstract
Charge transport of unintentionally doped GaSb nanowires was studied through the fabrication and analysis of nanowire field effect transistors (FETs). In this work, both temperature dependent and voltage dependent measurements demonstrate various operating regimes, including a transition from linear current-voltage behavior at low bias to a space-charge limited current (SCLC) at large bias. Analysis of the voltage and temperature variation in the SCLC regime provided quantitative information about the trap energy distribution in the nanowires, which, after thermal annealing, has been shown to reduce from 0.26 eV to 0.12 eV. The measurements also indicate that the GaSb nanowire FETs exhibit n-type behavior, which is likely due to oxygen impurities in the nanowires.
| Original language | English (US) |
|---|---|
| Article number | 104515 |
| Journal | Journal of Applied Physics |
| Volume | 111 |
| Issue number | 10 |
| DOIs | |
| State | Published - May 15 2012 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Charge transport and trap characterization in individual GaSb nanowires. / Xu, Wei; Chin, Alan; Ye, Laura; Ning, Cun-Zheng; Yu, Hongbin.
In: Journal of Applied Physics, Vol. 111, No. 10, 104515, 15.05.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Charge transport and trap characterization in individual GaSb nanowires
AU - Xu, Wei
AU - Chin, Alan
AU - Ye, Laura
AU - Ning, Cun-Zheng
AU - Yu, Hongbin
PY - 2012/5/15
Y1 - 2012/5/15
N2 - Charge transport of unintentionally doped GaSb nanowires was studied through the fabrication and analysis of nanowire field effect transistors (FETs). In this work, both temperature dependent and voltage dependent measurements demonstrate various operating regimes, including a transition from linear current-voltage behavior at low bias to a space-charge limited current (SCLC) at large bias. Analysis of the voltage and temperature variation in the SCLC regime provided quantitative information about the trap energy distribution in the nanowires, which, after thermal annealing, has been shown to reduce from 0.26 eV to 0.12 eV. The measurements also indicate that the GaSb nanowire FETs exhibit n-type behavior, which is likely due to oxygen impurities in the nanowires.
AB - Charge transport of unintentionally doped GaSb nanowires was studied through the fabrication and analysis of nanowire field effect transistors (FETs). In this work, both temperature dependent and voltage dependent measurements demonstrate various operating regimes, including a transition from linear current-voltage behavior at low bias to a space-charge limited current (SCLC) at large bias. Analysis of the voltage and temperature variation in the SCLC regime provided quantitative information about the trap energy distribution in the nanowires, which, after thermal annealing, has been shown to reduce from 0.26 eV to 0.12 eV. The measurements also indicate that the GaSb nanowire FETs exhibit n-type behavior, which is likely due to oxygen impurities in the nanowires.
UR - http://www.scopus.com/inward/record.url?scp=84862138519&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862138519&partnerID=8YFLogxK
U2 - 10.1063/1.4720080
DO - 10.1063/1.4720080
M3 - Article
VL - 111
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
M1 - 104515
ER -