Charge storage model for hysteretic negative-differential resistance in metal-molecule-metal junctions

Richard Kiehl, John D. Le, Panglijen Candra, Rebecca C. Hoye, Thomas R. Hoye

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Experimental results on the electrical characteristics of Hg-alkanethiolarenethiol-Au molecular junctions are used to develop a physical model for the hysteretic negative-differential resistance (NDR) for these, and possibly other, metal-molecule-metal junctions. The dependence of the room-temperature current-voltage characteristic on sweep direction and sweep rate is examined. Based on several specific electronic behaviors, it is concluded that the NDR is caused by slow charge capture (reduction or oxidation) during the forward sweep and the resultant effect on tunneling. The implications of this model on potential electronic applications are discussed.

Original languageEnglish (US)
Article number172102
JournalApplied Physics Letters
Volume88
Issue number17
DOIs
StatePublished - 2006
Externally publishedYes

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electronics
metals
molecules
oxidation
electric potential
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Charge storage model for hysteretic negative-differential resistance in metal-molecule-metal junctions. / Kiehl, Richard; Le, John D.; Candra, Panglijen; Hoye, Rebecca C.; Hoye, Thomas R.

In: Applied Physics Letters, Vol. 88, No. 17, 172102, 2006.

Research output: Contribution to journalArticle

Kiehl, Richard ; Le, John D. ; Candra, Panglijen ; Hoye, Rebecca C. ; Hoye, Thomas R. / Charge storage model for hysteretic negative-differential resistance in metal-molecule-metal junctions. In: Applied Physics Letters. 2006 ; Vol. 88, No. 17.
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