Charge déposition modeling of thermal neutron products in fast submicron MOS devices

X. W. Zhu; L. W. Massengill; C. R. Cirba; H. J. Barnaby

doi:10.1109/23.819096

Charge déposition modeling of thermal neutron products in fast submicron MOS devices

X. W. Zhu, L. W. Massengill, C. R. Cirba, H. J. Barnaby

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Ground-based thermal neutron reaction products (a, 7Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.

Original language	English (US)
Pages (from-to)	1378-1385
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	46
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/23.819096
State	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Cite this

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abstract = "Ground-based thermal neutron reaction products (a, 7Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.",

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AU - Barnaby, H. J.

PY - 1999

Y1 - 1999

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Charge déposition modeling of thermal neutron products in fast submicron MOS devices

Abstract

ASJC Scopus subject areas

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