Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Chemical Compounds

• Drain Current 99%
• Breakdown Voltage 96%
• Molecular Beam Epitaxy 92%
• Parasitic 79%
• Sheet Resistance 78%
• Compound Mobility 49%
• Current Density 47%
• Resistance 40%

Engineering & Materials Science

• Molecular beam epitaxy 100%
• High electron mobility transistors 74%
• Plasmas 59%
• Carrier mobility 24%
• Carrier concentration 22%
• Sheet resistance 22%
• Drain current 20%
• Electric breakdown 18%
• Current density 15%
• Substrates 11%

Physics & Astronomy

• high electron mobility transistors 66%
• molecular beam epitaxy 54%
• caps 17%
• carrier mobility 16%
• electrical faults 15%
• interlayers 14%
• current density 11%
• optimization 10%
• performance 7%