Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Matthew T. Hardy, David F. Storm, Brian P. Downey, D. Scott Katzer, David J. Meyer, Thomas O. McConkie, David Smith

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

N-polar InAlN-based high-electron-mobility transistors (HEMTs) have fundamental advantages relative to conventional Ga-polar AlGaN HEMTs for high frequency devices. An understanding of the epitaxial design space for controlling sheet carrier density (ns) and mobility (μ) is desirable to maximize power and frequency performance by improving breakdown voltage and reducing parasitic access resistance. In this work, the authors show that In0.17Al0.83N barrier thickness has a minimal impact on ns and μ, and an AlGaN cap layer decreases both ns and μ. Optimization of AlN and GaN interlayers can be used to maximize μ and set ns in the range of 1-3 × 1013cm-2. The authors use this approach to demonstrate N-polar HEMTs grown on freestanding GaN substrates with sheet resistance Rs = 190 Ω/□ and μ = 1400 cm2/V·s, leading to a maximum drain current density of 1.5 A/mm for HEMTs with a 5-μm source-drain spacing and Pt-based Schottky gates.

Original languageEnglish (US)
Article number061207
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume33
Issue number6
DOIs
StatePublished - Nov 1 2015

Fingerprint

High electron mobility transistors
high electron mobility transistors
Molecular beam epitaxy
molecular beam epitaxy
Plasmas
Drain current
Carrier mobility
Sheet resistance
carrier mobility
Electric breakdown
electrical faults
caps
Carrier concentration
interlayers
Current density
spacing
current density
optimization
Substrates
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy. / Hardy, Matthew T.; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J.; McConkie, Thomas O.; Smith, David.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 6, 061207, 01.11.2015.

Research output: Contribution to journalArticle

Hardy, Matthew T. ; Storm, David F. ; Downey, Brian P. ; Katzer, D. Scott ; Meyer, David J. ; McConkie, Thomas O. ; Smith, David. / Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2015 ; Vol. 33, No. 6.
@article{336a9e90357f4e73a3ce00e4e972e984,
title = "Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy",
abstract = "N-polar InAlN-based high-electron-mobility transistors (HEMTs) have fundamental advantages relative to conventional Ga-polar AlGaN HEMTs for high frequency devices. An understanding of the epitaxial design space for controlling sheet carrier density (ns) and mobility (μ) is desirable to maximize power and frequency performance by improving breakdown voltage and reducing parasitic access resistance. In this work, the authors show that In0.17Al0.83N barrier thickness has a minimal impact on ns and μ, and an AlGaN cap layer decreases both ns and μ. Optimization of AlN and GaN interlayers can be used to maximize μ and set ns in the range of 1-3 × 1013cm-2. The authors use this approach to demonstrate N-polar HEMTs grown on freestanding GaN substrates with sheet resistance Rs = 190 Ω/□ and μ = 1400 cm2/V·s, leading to a maximum drain current density of 1.5 A/mm for HEMTs with a 5-μm source-drain spacing and Pt-based Schottky gates.",
author = "Hardy, {Matthew T.} and Storm, {David F.} and Downey, {Brian P.} and Katzer, {D. Scott} and Meyer, {David J.} and McConkie, {Thomas O.} and David Smith",
year = "2015",
month = "11",
day = "1",
doi = "10.1116/1.4935130",
language = "English (US)",
volume = "33",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

AU - Hardy, Matthew T.

AU - Storm, David F.

AU - Downey, Brian P.

AU - Katzer, D. Scott

AU - Meyer, David J.

AU - McConkie, Thomas O.

AU - Smith, David

PY - 2015/11/1

Y1 - 2015/11/1

N2 - N-polar InAlN-based high-electron-mobility transistors (HEMTs) have fundamental advantages relative to conventional Ga-polar AlGaN HEMTs for high frequency devices. An understanding of the epitaxial design space for controlling sheet carrier density (ns) and mobility (μ) is desirable to maximize power and frequency performance by improving breakdown voltage and reducing parasitic access resistance. In this work, the authors show that In0.17Al0.83N barrier thickness has a minimal impact on ns and μ, and an AlGaN cap layer decreases both ns and μ. Optimization of AlN and GaN interlayers can be used to maximize μ and set ns in the range of 1-3 × 1013cm-2. The authors use this approach to demonstrate N-polar HEMTs grown on freestanding GaN substrates with sheet resistance Rs = 190 Ω/□ and μ = 1400 cm2/V·s, leading to a maximum drain current density of 1.5 A/mm for HEMTs with a 5-μm source-drain spacing and Pt-based Schottky gates.

AB - N-polar InAlN-based high-electron-mobility transistors (HEMTs) have fundamental advantages relative to conventional Ga-polar AlGaN HEMTs for high frequency devices. An understanding of the epitaxial design space for controlling sheet carrier density (ns) and mobility (μ) is desirable to maximize power and frequency performance by improving breakdown voltage and reducing parasitic access resistance. In this work, the authors show that In0.17Al0.83N barrier thickness has a minimal impact on ns and μ, and an AlGaN cap layer decreases both ns and μ. Optimization of AlN and GaN interlayers can be used to maximize μ and set ns in the range of 1-3 × 1013cm-2. The authors use this approach to demonstrate N-polar HEMTs grown on freestanding GaN substrates with sheet resistance Rs = 190 Ω/□ and μ = 1400 cm2/V·s, leading to a maximum drain current density of 1.5 A/mm for HEMTs with a 5-μm source-drain spacing and Pt-based Schottky gates.

UR - http://www.scopus.com/inward/record.url?scp=84946549794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946549794&partnerID=8YFLogxK

U2 - 10.1116/1.4935130

DO - 10.1116/1.4935130

M3 - Article

AN - SCOPUS:84946549794

VL - 33

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 6

M1 - 061207

ER -