Characterizing the role of deformation during electrochemical etching of metallic films

Anil Kumar, Keng Hsu, Kyle Jacobs, Placid Ferreira, Nicholas X. Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrochemical dissolution of ionic species into a solid is an area of great interest in several fields including nanoscale patterning and energy storage. Such dissolution is strongly influenced by several factors e.g., work function difference, dislocation density, grain size, and number of grain boundaries. These parameters are strongly influenced by mechanical deformation of the ionic conductor. Here we characterize such a system of silver (Ag) and silver sulfide (Ag2S), where incorporation of Ag into the solid ionic conductor, Ag2S, is dramatically influenced by mechanical deformation. We show more than three-fold dissolution rate enhancement when the polycrystalline conductor is compressed to one-third of its original size. We attribute this enhancement to increased dislocation density which is supported by the high current densities observed during dissolution. Additionally, reduced electronic currents suggest most of this contribution comes from increased reaction at the metal-conductor interface. Our studies have important applications in areas involving ionic transport including direct metal patterning and energy storage technology.

Original languageEnglish (US)
Title of host publicationDeformation Mechanisms, Microstructure Evolution and Mechanical Properties of Nanoscale Materials
Pages175-180
Number of pages6
DOIs
StatePublished - Sep 30 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2010Dec 3 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1297
ISSN (Print)0272-9172

Other

Other2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/1012/3/10

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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