Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells

David Quispe; Syeda Mohsin; Ashling Leilaeioun; Zachary Holman

doi:10.1109/PVSC.2018.8547716

Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells

David Quispe, Syeda Mohsin, Ashling Leilaeioun, Zachary Holman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm ² /Vs with a sheet resistance of about 30- 40 Ω/sq. For the same sample, absorbance in the infrared wavelength range can be 1-3%.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3136-3138
Number of pages	3
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547716
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8547716

Cite this

Quispe, D., Mohsin, S., Leilaeioun, A., & Holman, Z. (2018). Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3136-3138). [8547716] (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547716

Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells. / Quispe, David; Mohsin, Syeda; Leilaeioun, Ashling et al.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3136-3138 8547716 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Quispe, D, Mohsin, S, Leilaeioun, A & Holman, Z 2018, Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547716, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 3136-3138, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547716

Quispe D, Mohsin S, Leilaeioun A, Holman Z. Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3136-3138. 8547716. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547716

Quispe, David ; Mohsin, Syeda ; Leilaeioun, Ashling et al. / Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3136-3138 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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abstract = " Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm 2 /Vs with a sheet resistance of about 30- 40 Ω/sq. For the same sample, absorbance in the infrared wavelength range can be 1-3%. ",

author = "David Quispe and Syeda Mohsin and Ashling Leilaeioun and Zachary Holman",

note = "Funding Information: This material is based upon work primarily supported by the National Science Foundation under award No. 1560031 and by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC – 1041895. Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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N1 - Funding Information: This material is based upon work primarily supported by the National Science Foundation under award No. 1560031 and by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC – 1041895. Publisher Copyright: © 2018 IEEE.

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AB - Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm 2 /Vs with a sheet resistance of about 30- 40 Ω/sq. For the same sample, absorbance in the infrared wavelength range can be 1-3%.

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Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells

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