Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Hong Chen, Xuanqi Huang, Houqiang Fu, Zhijian Lu, Xiaodong Zhang, Jossue A. Montes, Yuji Zhao

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (β), three-photon absorption coefficient (γ), and Kerr nonlinear refractive index (nkerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021¯) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient ( β), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be ∼0.90 cm/GW at 724 nm and ∼0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (nkerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be ∼2.5 0 × 10−14 cm2/W for all three samples. Three-photon absorption coefficients (γ) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.

Original languageEnglish (US)
Article number181110
JournalApplied Physics Letters
Volume110
Issue number18
DOIs
StatePublished - May 1 2017

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absorptivity
optical properties
photons
crystals
photonics
refractivity
defocusing
self focusing
nitrides
wavelengths
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations. / Chen, Hong; Huang, Xuanqi; Fu, Houqiang; Lu, Zhijian; Zhang, Xiaodong; Montes, Jossue A.; Zhao, Yuji.

In: Applied Physics Letters, Vol. 110, No. 18, 181110, 01.05.2017.

Research output: Contribution to journalArticle

Chen, Hong ; Huang, Xuanqi ; Fu, Houqiang ; Lu, Zhijian ; Zhang, Xiaodong ; Montes, Jossue A. ; Zhao, Yuji. / Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations. In: Applied Physics Letters. 2017 ; Vol. 110, No. 18.
@article{0205349eecb4417789e66a721cbdb165,
title = "Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations",
abstract = "We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (β), three-photon absorption coefficient (γ), and Kerr nonlinear refractive index (nkerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021¯) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient ( β), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be ∼0.90 cm/GW at 724 nm and ∼0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (nkerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be ∼2.5 0 × 10−14 cm2/W for all three samples. Three-photon absorption coefficients (γ) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.",
author = "Hong Chen and Xuanqi Huang and Houqiang Fu and Zhijian Lu and Xiaodong Zhang and Montes, {Jossue A.} and Yuji Zhao",
year = "2017",
month = "5",
day = "1",
doi = "10.1063/1.4983026",
language = "English (US)",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

AU - Chen, Hong

AU - Huang, Xuanqi

AU - Fu, Houqiang

AU - Lu, Zhijian

AU - Zhang, Xiaodong

AU - Montes, Jossue A.

AU - Zhao, Yuji

PY - 2017/5/1

Y1 - 2017/5/1

N2 - We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (β), three-photon absorption coefficient (γ), and Kerr nonlinear refractive index (nkerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021¯) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient ( β), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be ∼0.90 cm/GW at 724 nm and ∼0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (nkerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be ∼2.5 0 × 10−14 cm2/W for all three samples. Three-photon absorption coefficients (γ) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.

AB - We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (β), three-photon absorption coefficient (γ), and Kerr nonlinear refractive index (nkerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021¯) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient ( β), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be ∼0.90 cm/GW at 724 nm and ∼0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (nkerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be ∼2.5 0 × 10−14 cm2/W for all three samples. Three-photon absorption coefficients (γ) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.

UR - http://www.scopus.com/inward/record.url?scp=85018259459&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018259459&partnerID=8YFLogxK

U2 - 10.1063/1.4983026

DO - 10.1063/1.4983026

M3 - Article

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 181110

ER -