TY - JOUR
T1 - Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations
AU - Chen, Hong
AU - Huang, Xuanqi
AU - Fu, Houqiang
AU - Lu, Zhijian
AU - Zhang, Xiaodong
AU - Montes, Jossue A.
AU - Zhao, Yuji
N1 - Funding Information:
This work was supported by the Bisgrove Scholar Program from Science Foundation Arizona. We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. The author would like to thank Mengjia Zhu, Dr. Karl Weiss, Dr. Douglas Daniel, and Dr. Su Lin for the helpful assistance during the experiment.
Publisher Copyright:
© 2017 Author(s).
PY - 2017/5/1
Y1 - 2017/5/1
N2 - We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (β), three-photon absorption coefficient (γ), and Kerr nonlinear refractive index (nkerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021¯) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient ( β), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be ∼0.90 cm/GW at 724 nm and ∼0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (nkerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be ∼2.5 0 × 10−14 cm2/W for all three samples. Three-photon absorption coefficients (γ) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.
AB - We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (β), three-photon absorption coefficient (γ), and Kerr nonlinear refractive index (nkerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021¯) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient ( β), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be ∼0.90 cm/GW at 724 nm and ∼0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (nkerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, nkerr was measured to be ∼2.5 0 × 10−14 cm2/W for all three samples. Three-photon absorption coefficients (γ) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.
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U2 - 10.1063/1.4983026
DO - 10.1063/1.4983026
M3 - Article
AN - SCOPUS:85018259459
SN - 0003-6951
VL - 110
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 18
M1 - 181110
ER -