Abstract

We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages437-439
Number of pages3
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characterization of ZnGeAs<sub>2</sub> thin films produced by pulsed laser deposition'. Together they form a unique fingerprint.

  • Cite this

    Tang, Z. Z., Zhang, L., Singh, R., Wright, D., Peshek, T., Gessert, T., Coutts, T. J., Van Schilfgaarde, M., & Newman, N. (2009). Characterization of ZnGeAs2 thin films produced by pulsed laser deposition. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 437-439). [5411649] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411649