Characterization of ZnGeAs2 thin films produced by pulsed laser deposition

Z. Z. Tang; L. Zhang; Rakesh Singh; D. Wright; T. Peshek; T. Gessert; T. J. Coutts; M. Van Schilfgaarde; Nathan Newman

doi:10.1109/PVSC.2009.5411649

Characterization of ZnGeAs₂ thin films produced by pulsed laser deposition

Z. Z. Tang, L. Zhang, Rakesh Singh, D. Wright, T. Peshek, T. Gessert, T. J. Coutts, M. Van Schilfgaarde, Nathan Newman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We have characterized the properties of chalcopyrite ZnGeAs₂ thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs₂ thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μ_p, is over 50 cm²/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χ_min, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs₂ is an ideal candidate for photovoltaic applications.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	437-439
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2009.5411649
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411649

Cite this

Tang, Z. Z., Zhang, L., Singh, R., Wright, D., Peshek, T., Gessert, T., Coutts, T. J., Van Schilfgaarde, M., & Newman, N. (2009). Characterization of ZnGeAs₂ thin films produced by pulsed laser deposition. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 437-439). Article 5411649 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411649

Tang, ZZ, Zhang, L, Singh, R, Wright, D, Peshek, T, Gessert, T, Coutts, TJ, Van Schilfgaarde, M & Newman, N 2009, Characterization of ZnGeAs₂ thin films produced by pulsed laser deposition. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411649, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 437-439, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411649

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title = "Characterization of ZnGeAs2 thin films produced by pulsed laser deposition",

abstract = "We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.",

author = "Tang, {Z. Z.} and L. Zhang and Rakesh Singh and D. Wright and T. Peshek and T. Gessert and Coutts, {T. J.} and {Van Schilfgaarde}, M. and Nathan Newman",

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AU - Singh, Rakesh

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AU - Coutts, T. J.

AU - Van Schilfgaarde, M.

AU - Newman, Nathan

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N2 - We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.

AB - We have characterized the properties of chalcopyrite ZnGeAs2 thin films produced over a wide range of growth conditions using pulsed laser deposition. By using a Zn-enriched target, stoichiometric films could be produced up to a substrate temperature of 315° C; above which the films were Zn and As deficient. Optical absorption measurements indicate that bandgap of the ZnGeAs2 thin films is direct with a value of -1.15 eV. Hot point probe indicate that the as-deposited and annealed thin films are both p-type. Hall measurements confirm this and also indicate that the carrier mobility, μp, is over 50 cm2/V·sec in the 600° C annealed samples. Channeling Rutherford Backscattering Spectroscopy (RBS) indicates that the structurally best films are achieved after 450° C annealing with a channeling yield, χmin, of 500%. Our results, in combination with the observation that the constituents are abundant elements, suggest that ZnGeAs2 is an ideal candidate for photovoltaic applications.

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