Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si 1-xGe x alloys

Z. Wang, D. B. Aldrich, P. Goeller, Robert Nemanich, D. E. Sayers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si 1-xGe x solid state reaction. Thin films of C49 Zr(Si 1-yGe y) 2 were formed from the solid phase reaction of Zr and Si 1-xGe x bilayer structures. It was observed that Zr reacts uniformly with the Si 1-xGe x alloy and that C49 Zr(Si 1-xGe x) 2 is the final phase of the Zr-Si 1-xGe x solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si 1-xGe x) 2 thin films were higher than the sheet resistance measured for ZrSi 2 films. The stability of Zr(Si 1-xGe x) 2 in contact with Si 1-xGe x was investigated and no germanium segregation was detected in the Zr(Si 1-xGe x) 2/Si 1-xGe x structures.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995


OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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