Abstract
We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si 1-xGe x solid state reaction. Thin films of C49 Zr(Si 1-yGe y) 2 were formed from the solid phase reaction of Zr and Si 1-xGe x bilayer structures. It was observed that Zr reacts uniformly with the Si 1-xGe x alloy and that C49 Zr(Si 1-xGe x) 2 is the final phase of the Zr-Si 1-xGe x solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si 1-xGe x) 2 thin films were higher than the sheet resistance measured for ZrSi 2 films. The stability of Zr(Si 1-xGe x) 2 in contact with Si 1-xGe x was investigated and no germanium segregation was detected in the Zr(Si 1-xGe x) 2/Si 1-xGe x structures.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 387-392 |
Number of pages | 6 |
Volume | 402 |
State | Published - 1996 |
Externally published | Yes |
Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995 |
Other
Other | Proceedings of the 1995 MRS Fall Symposium |
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City | Boston, MA, USA |
Period | 11/27/95 → 11/30/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials