Characterization of zirconium-diamond interfaces

P. K. Baumann, S. P. Bozeman, B. L. Ward, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Thin Zr films were deposited on natural single crystal diamond (100) substrates by e-beam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500 °C or 1150 °C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2 angstroms of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 μA) of 79 V/μm for positive electron affinity diamond surfaces and values as low as 20 V/μm for Zr on diamond.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages143-148
Number of pages6
Volume423
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/8/964/12/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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