The first results pertaining to the growth and characterization of titanium silicide contacts deposited on natural semiconducting diamond substrates are reported. The titanium silicide films were formed by the co-deposition of silicon and titanium in ultra-high vacuum by electron-beam evaporation in a molecular beam epitaxy (MBE) system. The grown layers have been characterized using Raman spectroscopy, scanning tunneling microscopy (STM) and current-voltage (I-V) techniques. In particular, it has been shown from I-V measurements taken at room temperature that the titanium silicide film forms a low-barrier rectifying contact. Consistent with the observed low-barrier height, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, on subsequent annealing of the titanium silicide contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25 -400°C temperature range.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Science Monographs|
|State||Published - Jan 1 1991|
ASJC Scopus subject areas
- Metals and Alloys