Abstract
The shape of the hot electron distribution function in semiconductor devices is insufficiently described using only the first four moments. We propose using six moments of the distribution function to obtain a more accurate description of hot carrier phenomena. An analytic expression for the symmetric part of the distribution function as a function of the even moments is given which shows good agreement with Monte Carlo data for both the bulk case and inside n+-n-n+ test structures. The influence of the band structure on the parameters of the distribution function is studied and proven to be of importance for an accurate description.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3869-3879 |
| Number of pages | 11 |
| Journal | Journal of Applied Physics |
| Volume | 91 |
| Issue number | 6 |
| DOIs | |
| State | Published - Mar 15 2002 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Characterization of the hot electron distribution function using six moments. / Grasser, T.; Kosina, H.; Heitzinger, C.; Selberherr, S.
In: Journal of Applied Physics, Vol. 91, No. 6, 15.03.2002, p. 3869-3879.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of the hot electron distribution function using six moments
AU - Grasser, T.
AU - Kosina, H.
AU - Heitzinger, C.
AU - Selberherr, S.
PY - 2002/3/15
Y1 - 2002/3/15
N2 - The shape of the hot electron distribution function in semiconductor devices is insufficiently described using only the first four moments. We propose using six moments of the distribution function to obtain a more accurate description of hot carrier phenomena. An analytic expression for the symmetric part of the distribution function as a function of the even moments is given which shows good agreement with Monte Carlo data for both the bulk case and inside n+-n-n+ test structures. The influence of the band structure on the parameters of the distribution function is studied and proven to be of importance for an accurate description.
AB - The shape of the hot electron distribution function in semiconductor devices is insufficiently described using only the first four moments. We propose using six moments of the distribution function to obtain a more accurate description of hot carrier phenomena. An analytic expression for the symmetric part of the distribution function as a function of the even moments is given which shows good agreement with Monte Carlo data for both the bulk case and inside n+-n-n+ test structures. The influence of the band structure on the parameters of the distribution function is studied and proven to be of importance for an accurate description.
UR - http://www.scopus.com/inward/record.url?scp=0037087458&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037087458&partnerID=8YFLogxK
U2 - 10.1063/1.1450257
DO - 10.1063/1.1450257
M3 - Article
VL - 91
SP - 3869
EP - 3879
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
ER -