Characterization of the hot electron distribution function using six moments

T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The shape of the hot electron distribution function in semiconductor devices is insufficiently described using only the first four moments. We propose using six moments of the distribution function to obtain a more accurate description of hot carrier phenomena. An analytic expression for the symmetric part of the distribution function as a function of the even moments is given which shows good agreement with Monte Carlo data for both the bulk case and inside n+-n-n+ test structures. The influence of the band structure on the parameters of the distribution function is studied and proven to be of importance for an accurate description.

Original languageEnglish (US)
Pages (from-to)3869-3879
Number of pages11
JournalJournal of Applied Physics
Volume91
Issue number6
DOIs
StatePublished - Mar 15 2002
Externally publishedYes

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electron distribution
hot electrons
distribution functions
moments
semiconductor devices

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Characterization of the hot electron distribution function using six moments. / Grasser, T.; Kosina, H.; Heitzinger, C.; Selberherr, S.

In: Journal of Applied Physics, Vol. 91, No. 6, 15.03.2002, p. 3869-3879.

Research output: Contribution to journalArticle

Grasser, T, Kosina, H, Heitzinger, C & Selberherr, S 2002, 'Characterization of the hot electron distribution function using six moments', Journal of Applied Physics, vol. 91, no. 6, pp. 3869-3879. https://doi.org/10.1063/1.1450257
Grasser, T. ; Kosina, H. ; Heitzinger, C. ; Selberherr, S. / Characterization of the hot electron distribution function using six moments. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 6. pp. 3869-3879.
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