Characterization of the contact between TiO2 and PbS quantum dots

Z. V. Saponjic; M. I. Comor; T. Rajh; J. M. Nedeljkovic

Characterization of the contact between TiO₂ and PbS quantum dots

Z. V. Saponjic, M. I. Comor, T. Rajh, J. M. Nedeljkovic

Research output: Contribution to conference › Paper › peer-review

Abstract

The synthetic procedure of the growth of one semiconductor material (PbS) on a seed of another (TiO₂) have been developed. The contact between TiO₂ and PbS quantum dots was characterized by optical absorption and fluorescence. The dramatic increase of the bandgap of PbS (ΔE_g=1.5 eV) was observed after precipitation of PbS in the colloidal solution of TiO₂. The positions of the lowest empty energy level of TiO₂ and PbS single quantum dots as well as TiO₂-PbS composite were determined by pulse radiolysis technique. The contact between TiO₂ and PbS quantum dots leads to the transfer of electrons from PbS to TiO₂.

Original language	English (US)
Pages	157-160
Number of pages	4
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2) - Nis, Serbia Duration: Sep 12 1995 → Sep 14 1995

Conference

Conference	Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)
City	Nis, Serbia
Period	9/12/95 → 9/14/95

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Characterization of the contact between TiO2 and PbS quantum dots",

abstract = "The synthetic procedure of the growth of one semiconductor material (PbS) on a seed of another (TiO2) have been developed. The contact between TiO2 and PbS quantum dots was characterized by optical absorption and fluorescence. The dramatic increase of the bandgap of PbS (ΔEg=1.5 eV) was observed after precipitation of PbS in the colloidal solution of TiO2. The positions of the lowest empty energy level of TiO2 and PbS single quantum dots as well as TiO2-PbS composite were determined by pulse radiolysis technique. The contact between TiO2 and PbS quantum dots leads to the transfer of electrons from PbS to TiO2.",

author = "Saponjic, {Z. V.} and Comor, {M. I.} and T. Rajh and Nedeljkovic, {J. M.}",

year = "1995",

language = "English (US)",

pages = "157--160",

note = "Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2) ; Conference date: 12-09-1995 Through 14-09-1995",

}

TY - CONF

T1 - Characterization of the contact between TiO2 and PbS quantum dots

AU - Saponjic, Z. V.

AU - Comor, M. I.

AU - Rajh, T.

AU - Nedeljkovic, J. M.

PY - 1995

Y1 - 1995

N2 - The synthetic procedure of the growth of one semiconductor material (PbS) on a seed of another (TiO2) have been developed. The contact between TiO2 and PbS quantum dots was characterized by optical absorption and fluorescence. The dramatic increase of the bandgap of PbS (ΔEg=1.5 eV) was observed after precipitation of PbS in the colloidal solution of TiO2. The positions of the lowest empty energy level of TiO2 and PbS single quantum dots as well as TiO2-PbS composite were determined by pulse radiolysis technique. The contact between TiO2 and PbS quantum dots leads to the transfer of electrons from PbS to TiO2.

AB - The synthetic procedure of the growth of one semiconductor material (PbS) on a seed of another (TiO2) have been developed. The contact between TiO2 and PbS quantum dots was characterized by optical absorption and fluorescence. The dramatic increase of the bandgap of PbS (ΔEg=1.5 eV) was observed after precipitation of PbS in the colloidal solution of TiO2. The positions of the lowest empty energy level of TiO2 and PbS single quantum dots as well as TiO2-PbS composite were determined by pulse radiolysis technique. The contact between TiO2 and PbS quantum dots leads to the transfer of electrons from PbS to TiO2.

UR - http://www.scopus.com/inward/record.url?scp=0029492572&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029492572&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029492572

SP - 157

EP - 160

T2 - Proceedings of the 1995 20th International Conference on Microelectronics. Part 1 (of 2)

Y2 - 12 September 1995 through 14 September 1995

ER -

Characterization of the contact between TiO₂ and PbS quantum dots

Abstract

Conference

ASJC Scopus subject areas

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