Characterization of structural defects in SnSe₂ thin films grown by molecular beam epitaxy on GaAs (111)B substrates

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Thin films 60%
• Epitaxial growth 60%
• Characterization (materials science) 56%
• Fluxes 52%
• Substrates 45%
• Defects 44%
• Growth temperature 34%
• Crystal structure 27%
• Tin 25%
• Transmission electron microscopy 22%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Epitaxial Growth 52%
• P3-M1 35%
• Space Group 31%
• Liquid Film 31%
• Diselenide 26%
• Pnma 25%
• Selenide 24%
• Transmission Electron Microscopy 14%
• Crystal Structure 10%

Physics & Astronomy

• molecular beam epitaxy 54%
• characterization 35%
• defects 35%
• thin films 33%
• selenides 20%
• tin 15%
• crystal structure 12%
• transmission electron microscopy 10%
• temperature 4%