Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures

M. J. Rack, Trevor Thornton, D. K. Ferry, Jeff Roberts, Richard Westhoff

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.

Original languageEnglish (US)
Pages (from-to)291-296
Number of pages6
JournalSemiconductor Science and Technology
Volume15
Issue number3
DOIs
StatePublished - Mar 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Characterization of strained silicon quantum wells and Si<sub>1-x</sub>Ge<sub>x</sub> heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures'. Together they form a unique fingerprint.

  • Cite this