Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures

M. J. Rack, Trevor Thornton, D. K. Ferry, Jeff Roberts, Richard Westhoff

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.

Original languageEnglish (US)
Pages (from-to)291-296
Number of pages6
JournalSemiconductor Science and Technology
Volume15
Issue number3
DOIs
StatePublished - Mar 2000

Fingerprint

Auger electron spectroscopy
Semiconductor quantum wells
Auger spectroscopy
electron spectroscopy
Heterojunctions
quantum wells
silicon
profiles
spacers
buffers
modulation
fabrication
optimization
scanning
Buffers
Doping (additives)
Modulation
Scanning
Fabrication
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures. / Rack, M. J.; Thornton, Trevor; Ferry, D. K.; Roberts, Jeff; Westhoff, Richard.

In: Semiconductor Science and Technology, Vol. 15, No. 3, 03.2000, p. 291-296.

Research output: Contribution to journalArticle

@article{8c4a9a33f9ee4053bdfe24bb4a72b912,
title = "Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures",
abstract = "Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.",
author = "Rack, {M. J.} and Trevor Thornton and Ferry, {D. K.} and Jeff Roberts and Richard Westhoff",
year = "2000",
month = "3",
doi = "10.1088/0268-1242/15/3/312",
language = "English (US)",
volume = "15",
pages = "291--296",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures

AU - Rack, M. J.

AU - Thornton, Trevor

AU - Ferry, D. K.

AU - Roberts, Jeff

AU - Westhoff, Richard

PY - 2000/3

Y1 - 2000/3

N2 - Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.

AB - Critical fabrication parameters of modulation-doped Si/SiGe heterostructures may be extensively and quickly characterized using a combination of spreading resistance profile measurements and scanning Auger electron spectroscopy on bevelled heterostructures. We have used this combined approach, with relatively accessible characterization tools, to determine the thickness, composition and doping concentrations in the supply, spacer, well, buffer and graded layers of the heterostructures. Depth profiles of the active layers and virtual substrate can be assessed in a straightforward manner, allowing for optimization of processing parameters and of the overall device structure.

UR - http://www.scopus.com/inward/record.url?scp=0033904166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033904166&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/15/3/312

DO - 10.1088/0268-1242/15/3/312

M3 - Article

AN - SCOPUS:0033904166

VL - 15

SP - 291

EP - 296

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -