Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes

Y. Wang, L. Chen, M. K. Mikhov, G. Samson, Brian Skromme

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Formation of Il Shockley stacking faults by recombination- enhanced defect glide in 4HSiC p-i-n diodes subject to high forward current stress is studied in diodes on both c-oriented and aoriented substrates. The forward voltage increases during stressing for both orientations, accompanied by nucleation and expansion of faults visible in electroluminescence (EL) imaging. Low temperature photoluminescence (PL) measurements on degraded diodes of both orientations reveal the same set of exciton peaks, confirming that the electronic structure of the faults is the same in both cases. The spectroscopic data are compared to self-consistent solutions of the Schrödinger and Poisson equations including polarization charge. Dislocations nucleating the faults are bright in EL images but dark in electron beam-induced current (EBIC) imaging, confirming that they are sites of enhanced radiative recombination.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
Pages363-366
Number of pages4
Volume527-529
EditionPART 1
StatePublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Stacking faults
Diodes
Electroluminescence
Imaging techniques
Poisson equation
Induced currents
Excitons
Crystal orientation
Electronic structure
Electron beams
Photoluminescence
Nucleation
Polarization
Defects
Electric potential
Substrates
Temperature

Keywords

  • 4H-SiC
  • EBIC
  • Electroluminescence
  • P-i-n diode
  • Photoluminescence
  • Stacking fault

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Wang, Y., Chen, L., Mikhov, M. K., Samson, G., & Skromme, B. (2006). Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes. In Materials Science Forum (PART 1 ed., Vol. 527-529, pp. 363-366). (Materials Science Forum; Vol. 527-529, No. PART 1).

Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes. / Wang, Y.; Chen, L.; Mikhov, M. K.; Samson, G.; Skromme, Brian.

Materials Science Forum. Vol. 527-529 PART 1. ed. 2006. p. 363-366 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, Y, Chen, L, Mikhov, MK, Samson, G & Skromme, B 2006, Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes. in Materials Science Forum. PART 1 edn, vol. 527-529, Materials Science Forum, no. PART 1, vol. 527-529, pp. 363-366, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Wang Y, Chen L, Mikhov MK, Samson G, Skromme B. Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes. In Materials Science Forum. PART 1 ed. Vol. 527-529. 2006. p. 363-366. (Materials Science Forum; PART 1).
Wang, Y. ; Chen, L. ; Mikhov, M. K. ; Samson, G. ; Skromme, Brian. / Characterization of stacking fault-induced behavior in 4H-SiC p-i-n diodes. Materials Science Forum. Vol. 527-529 PART 1. ed. 2006. pp. 363-366 (Materials Science Forum; PART 1).
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