Characterization of SiO2/Al2O3stack passivation with n- And p-type poly-Si layers

Sangpyeong Kim, Andre Augusto, Stuart Bowden, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this manuscript, we characterized SiO2/Al2O3 (1nm/0.8nm) layers stacked with n-type polysilicon or p-type polysilicon. This study explores the surface passivation capabilities of these structures. In this work, we also optimized the rapid thermal annealing (RTA) in forming gas (N2/H2) environment. Using a very thin Al2O3 (<1nm) we accomplished effective lifetimes <100 μs. By adding a thin SiO2 (1nm) layer prior to the Al2O3 deposition, we improved the effective lifetime >500 μs. The SiO2 layer enhances the chemical and field effect passivation by increasing hydrogen contents and negative fixed charge effect of the Al2O3. To increase further the effective lifetime, we added doped a-Si:H layers on top of the SiO2/Al2O3. The doped a-Si:H layers are responsible to hydrogenate the stack. After depositing the n-a-Si:H, the effective lifetime was improved from 100μs to 1ms. After RTA the effective lifetime was increased to 4ms. When we deposited the p-a-Si:H, the effective lifetime was degraded from 60μs to 10μs. After RTA the effective lifetime didn't change significantly.

Original languageEnglish (US)
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1712-1715
Number of pages4
ISBN (Electronic)9781665419222
DOIs
StatePublished - Jun 20 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: Jun 20 2021Jun 25 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period6/20/216/25/21

Keywords

  • Rapid thermal annealing
  • SiO/AlOpassivation
  • Stack passivation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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