CHARACTERIZATION OF Si-IMPLANTED AND ELECTRON-BEAM-ANNEALED SILICON-ON-SAPPHIRE USING HIGH-RESOLUTION ELECTRON MICROSCOPY.

David Smith, L. A. Freeman, R. A. McMahon, H. Ahmed, M. G. Pitt, T. B. Peters

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Silicon-on-sapphire films have been characterized by high-resolution electron microscopy at 500 kv following silicon implantation and electron beam annealing. The effect of implantation with 10**1**5 Si/cm**2 at 190 kev was to amorphize most of the 0. 3- mu m silicon layer, in particular breaking up the lattice defects originating from the interface. The remaining crystalline surface layer acted as a seed for the recrystallization of the film back to the interface. There was substantial decrease in the number of lattice defects present in the silicon compared to the as-grown films, although amorphous layers varying in thickness up to 50 A were formed at the interface. Rutherford backscattering spectrometry measurements of the film crystallinity showed good correlation with the observed microstructural changes.

Original languageEnglish (US)
Pages (from-to)2207-2212
Number of pages6
JournalJournal of Applied Physics
Volume56
Issue number8
DOIs
StatePublished - Jan 1 1984
Externally publishedYes

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electron microscopy
sapphire
electron beams
high resolution
silicon
implantation
defects
seeds
crystallinity
backscattering
surface layers
annealing
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

CHARACTERIZATION OF Si-IMPLANTED AND ELECTRON-BEAM-ANNEALED SILICON-ON-SAPPHIRE USING HIGH-RESOLUTION ELECTRON MICROSCOPY. / Smith, David; Freeman, L. A.; McMahon, R. A.; Ahmed, H.; Pitt, M. G.; Peters, T. B.

In: Journal of Applied Physics, Vol. 56, No. 8, 01.01.1984, p. 2207-2212.

Research output: Contribution to journalArticle

Smith, David ; Freeman, L. A. ; McMahon, R. A. ; Ahmed, H. ; Pitt, M. G. ; Peters, T. B. / CHARACTERIZATION OF Si-IMPLANTED AND ELECTRON-BEAM-ANNEALED SILICON-ON-SAPPHIRE USING HIGH-RESOLUTION ELECTRON MICROSCOPY. In: Journal of Applied Physics. 1984 ; Vol. 56, No. 8. pp. 2207-2212.
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