Characterization of Si-implanted and electron-beam-annealed silicon-on-sapphire using high-resolution electron microscopy

David J. Smith, L. A. Freeman, R. A. McMahon, H. Ahmed, M. G. Pitt, T. B. Peters

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Silicon-on-sapphire films have been characterized by high-resolution electron microscopy at 500 kV following silicon implantation and electron beam annealing. The effect of implantation with 1015 Si/cm 2 at 190 keV was to amorphize most of the 0.3-μm silicon layer, in particular breaking up the lattice defects originating from the interface. The remaining crystalline surface layer acted as a seed for the recrystallization of the film back to the interface. There was a substantial decrease in the number of lattice defects present in the silicon compared to the as-grown films, although amorphous layers varying in thickness up to 50 Å were formed at the interface. Rutherford backscattering spectrometry measurements of the film crystallinity showed good correlation with the observed microstructural changes.

Original languageEnglish (US)
Pages (from-to)2207-2212
Number of pages6
JournalJournal of Applied Physics
Volume56
Issue number8
DOIs
StatePublished - Dec 1 1984
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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