Characterization of self-heating in high-mobility Ge FinFET pMOS devices

E. Bury, B. Kaczer, J. Mitard, N. Collaert, N. S. Khatami, Z. Aksamija, Dragica Vasileska, K. Raleva, L. Witters, G. Hellings, D. Linten, G. Groeseneken, A. Thean

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Abstract

Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT60-T61
ISBN (Electronic)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2015-August
ISSN (Print)0743-1562

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period6/16/156/18/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bury, E., Kaczer, B., Mitard, J., Collaert, N., Khatami, N. S., Aksamija, Z., Vasileska, D., Raleva, K., Witters, L., Hellings, G., Linten, D., Groeseneken, G., & Thean, A. (2015). Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (pp. T60-T61). [7223703] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223703