Characterization of self-heating in high-mobility Ge FinFET pMOS devices

E. Bury; B. Kaczer; J. Mitard; N. Collaert; N. S. Khatami; Z. Aksamija; Dragica Vasileska; K. Raleva; L. Witters; G. Hellings; D. Linten; G. Groeseneken; A. Thean

doi:10.1109/VLSIT.2015.7223703

Characterization of self-heating in high-mobility Ge FinFET pMOS devices

E. Bury, B. Kaczer, J. Mitard, N. Collaert, N. S. Khatami, Z. Aksamija, Dragica Vasileska, K. Raleva, L. Witters, G. Hellings, D. Linten, G. Groeseneken, A. Thean

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

28 Scopus citations

Abstract

Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.

Original language	English (US)
Title of host publication	2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T60-T61
ISBN (Electronic)	9784863485013
DOIs	https://doi.org/10.1109/VLSIT.2015.7223703
State	Published - Aug 25 2015
Event	Symposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan Duration: Jun 16 2015 → Jun 18 2015

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2015-August
ISSN (Print)	0743-1562

Other

Other	Symposium on VLSI Technology, VLSI Technology 2015
Country/Territory	Japan
City	Kyoto
Period	6/16/15 → 6/18/15

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2015.7223703

Cite this

Bury, E., Kaczer, B., Mitard, J., Collaert, N., Khatami, N. S., Aksamija, Z., Vasileska, D., Raleva, K., Witters, L., Hellings, G., Linten, D., Groeseneken, G., & Thean, A. (2015). Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (pp. T60-T61). Article 7223703 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223703

Characterization of self-heating in high-mobility Ge FinFET pMOS devices. / Bury, E.; Kaczer, B.; Mitard, J. et al.
2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. p. T60-T61 7223703 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bury, E, Kaczer, B, Mitard, J, Collaert, N, Khatami, NS, Aksamija, Z, Vasileska, D, Raleva, K, Witters, L, Hellings, G, Linten, D, Groeseneken, G & Thean, A 2015, Characterization of self-heating in high-mobility Ge FinFET pMOS devices. in 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers., 7223703, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. T60-T61, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 6/16/15. https://doi.org/10.1109/VLSIT.2015.7223703

Bury E, Kaczer B, Mitard J, Collaert N, Khatami NS, Aksamija Z et al. Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2015. p. T60-T61. 7223703. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2015.7223703

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Characterization of self-heating in high-mobility Ge FinFET pMOS devices

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