Abstract

Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT60-T61
Volume2015-August
ISBN (Print)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period6/16/156/18/15

Fingerprint

Heating
FinFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bury, E., Kaczer, B., Mitard, J., Collaert, N., Khatami, N. S., Aksamija, Z., ... Thean, A. (2015). Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology (Vol. 2015-August, pp. T60-T61). [7223703] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223703

Characterization of self-heating in high-mobility Ge FinFET pMOS devices. / Bury, E.; Kaczer, B.; Mitard, J.; Collaert, N.; Khatami, N. S.; Aksamija, Z.; Vasileska, Dragica; Raleva, K.; Witters, L.; Hellings, G.; Linten, D.; Groeseneken, G.; Thean, A.

Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. T60-T61 7223703.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bury, E, Kaczer, B, Mitard, J, Collaert, N, Khatami, NS, Aksamija, Z, Vasileska, D, Raleva, K, Witters, L, Hellings, G, Linten, D, Groeseneken, G & Thean, A 2015, Characterization of self-heating in high-mobility Ge FinFET pMOS devices. in Digest of Technical Papers - Symposium on VLSI Technology. vol. 2015-August, 7223703, Institute of Electrical and Electronics Engineers Inc., pp. T60-T61, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 6/16/15. https://doi.org/10.1109/VLSIT.2015.7223703
Bury E, Kaczer B, Mitard J, Collaert N, Khatami NS, Aksamija Z et al. Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. T60-T61. 7223703 https://doi.org/10.1109/VLSIT.2015.7223703
Bury, E. ; Kaczer, B. ; Mitard, J. ; Collaert, N. ; Khatami, N. S. ; Aksamija, Z. ; Vasileska, Dragica ; Raleva, K. ; Witters, L. ; Hellings, G. ; Linten, D. ; Groeseneken, G. ; Thean, A. / Characterization of self-heating in high-mobility Ge FinFET pMOS devices. Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. T60-T61
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