Characterization of self-heating in high-mobility Ge FinFET pMOS devices

E. Bury, B. Kaczer, J. Mitard, N. Collaert, N. S. Khatami, Z. Aksamija, Dragica Vasileska, K. Raleva, L. Witters, G. Hellings, D. Linten, G. Groeseneken, A. Thean

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT60-T61
Volume2015-August
ISBN (Print)9784863485013
DOIs
StatePublished - Aug 25 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: Jun 16 2015Jun 18 2015

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period6/16/156/18/15

Fingerprint

Heating
FinFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bury, E., Kaczer, B., Mitard, J., Collaert, N., Khatami, N. S., Aksamija, Z., ... Thean, A. (2015). Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology (Vol. 2015-August, pp. T60-T61). [7223703] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223703

Characterization of self-heating in high-mobility Ge FinFET pMOS devices. / Bury, E.; Kaczer, B.; Mitard, J.; Collaert, N.; Khatami, N. S.; Aksamija, Z.; Vasileska, Dragica; Raleva, K.; Witters, L.; Hellings, G.; Linten, D.; Groeseneken, G.; Thean, A.

Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. T60-T61 7223703.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bury, E, Kaczer, B, Mitard, J, Collaert, N, Khatami, NS, Aksamija, Z, Vasileska, D, Raleva, K, Witters, L, Hellings, G, Linten, D, Groeseneken, G & Thean, A 2015, Characterization of self-heating in high-mobility Ge FinFET pMOS devices. in Digest of Technical Papers - Symposium on VLSI Technology. vol. 2015-August, 7223703, Institute of Electrical and Electronics Engineers Inc., pp. T60-T61, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 6/16/15. https://doi.org/10.1109/VLSIT.2015.7223703
Bury E, Kaczer B, Mitard J, Collaert N, Khatami NS, Aksamija Z et al. Characterization of self-heating in high-mobility Ge FinFET pMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. T60-T61. 7223703 https://doi.org/10.1109/VLSIT.2015.7223703
Bury, E. ; Kaczer, B. ; Mitard, J. ; Collaert, N. ; Khatami, N. S. ; Aksamija, Z. ; Vasileska, Dragica ; Raleva, K. ; Witters, L. ; Hellings, G. ; Linten, D. ; Groeseneken, G. ; Thean, A. / Characterization of self-heating in high-mobility Ge FinFET pMOS devices. Digest of Technical Papers - Symposium on VLSI Technology. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. T60-T61
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