Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

John Y. Spann; Robert A. Anderson; Trevor Thornton; Gari Harris; Shawn G. Thomas; Clarence Tracy

doi:10.1109/LED.2004.842653

Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

John Y. Spann, Robert A. Anderson, Trevor Thornton, Gari Harris, Shawn G. Thomas, Clarence Tracy

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 μm. The resistivity values for films annealed in the range 350 °C-500 °C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10^-7 Ω.cm² can be realized using NiGe formed on heavily doped p-type germanium.

Original language	English (US)
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LED.2004.842653
State	Published - Mar 2005

Keywords

Conductivity measurement
Germanium
MOSFETs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2004.842653

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title = "Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs",

abstract = "We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 μm. The resistivity values for films annealed in the range 350 °C-500 °C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 Ω.cm2 can be realized using NiGe formed on heavily doped p-type germanium.",

keywords = "Conductivity measurement, Germanium, MOSFETs",

author = "Spann, {John Y.} and Anderson, {Robert A.} and Trevor Thornton and Gari Harris and Thomas, {Shawn G.} and Clarence Tracy",

note = "Funding Information: Manuscript received November 5, 2004; revised December 15, 2004. The work at Arizona State University was supported by Freescale through Connection One, a National Science Foundation Industry/University Cooperative Research Center. The review of this letter was arranged by Editor B. Yu. J. Y. Spann, R. A. Anderson, and T. J. Thornton are with the Department of Electrical Engineering and the Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206 USA (e-mail: t.thornton@asu.edu). G. Harris and S. G. Thomas are with Motorola, Tempe, AZ 85284 USA. C. Tracy is with FreeScale, Tempe, AZ 85284 USA. Digital Object Identifier 10.1109/LED.2004.842653",

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AU - Thomas, Shawn G.

AU - Tracy, Clarence

N1 - Funding Information: Manuscript received November 5, 2004; revised December 15, 2004. The work at Arizona State University was supported by Freescale through Connection One, a National Science Foundation Industry/University Cooperative Research Center. The review of this letter was arranged by Editor B. Yu. J. Y. Spann, R. A. Anderson, and T. J. Thornton are with the Department of Electrical Engineering and the Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206 USA (e-mail: t.thornton@asu.edu). G. Harris and S. G. Thomas are with Motorola, Tempe, AZ 85284 USA. C. Tracy is with FreeScale, Tempe, AZ 85284 USA. Digital Object Identifier 10.1109/LED.2004.842653

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N2 - We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 μm. The resistivity values for films annealed in the range 350 °C-500 °C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 Ω.cm2 can be realized using NiGe formed on heavily doped p-type germanium.

AB - We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 μm. The resistivity values for films annealed in the range 350 °C-500 °C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10-7 Ω.cm2 can be realized using NiGe formed on heavily doped p-type germanium.

KW - Conductivity measurement

KW - Germanium

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Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

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