Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

M. Matsumura, J. M. Fernandez, T. J. Thornton, R. S. Prasad, S. N. Holmes, X. M. Zhang, M. H. Xie, J. Zhang, B. A. Joyce

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Abstract

We have grown n-channel Si/SiGe modulation doped structures by gas source molecular beam epitaxy using arsine as the n-type dopant source. The structures were characterized by transmission electron microscopy, secondary ion mass spectroscopy, electrochemical capacitance voltage analysis and x-ray diffraction. Arsenic and free electron concentrations in excess of 10 19 cm-3 could be obtained with substantial surface segregation. Several different structures have been grown and their transport properties investigated. Low-temperature electron mobilities of up to 60000 cm2 V-1 s-1 in the dark (75800 cm2 V-1 s-1 after illumination) were obtained with a sheet density range (4-7)*1011 cm-2. Parallel conduction is discussed in terms of the effect of illumination.

Original languageEnglish (US)
Article number007
Pages (from-to)1247-1252
Number of pages6
JournalSemiconductor Science and Technology
Volume10
Issue number9
DOIs
StatePublished - Dec 1 1995

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Matsumura, M., Fernandez, J. M., Thornton, T. J., Prasad, R. S., Holmes, S. N., Zhang, X. M., Xie, M. H., Zhang, J., & Joyce, B. A. (1995). Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. Semiconductor Science and Technology, 10(9), 1247-1252. [007]. https://doi.org/10.1088/0268-1242/10/9/007