Abstract
We have grown n-channel Si/SiGe modulation doped structures by gas source molecular beam epitaxy using arsine as the n-type dopant source. The structures were characterized by transmission electron microscopy, secondary ion mass spectroscopy, electrochemical capacitance voltage analysis and x-ray diffraction. Arsenic and free electron concentrations in excess of 10 19 cm-3 could be obtained with substantial surface segregation. Several different structures have been grown and their transport properties investigated. Low-temperature electron mobilities of up to 60000 cm2 V-1 s-1 in the dark (75800 cm2 V-1 s-1 after illumination) were obtained with a sheet density range (4-7)*1011 cm-2. Parallel conduction is discussed in terms of the effect of illumination.
Original language | English (US) |
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Article number | 007 |
Pages (from-to) | 1247-1252 |
Number of pages | 6 |
Journal | Semiconductor Science and Technology |
Volume | 10 |
Issue number | 9 |
DOIs | |
State | Published - 1995 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry