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Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices
Kai Fu, Xin Qi, Houqiang Fu, Po Yi Su, Hanxiao Liu, Tsung Han Yang, Chen Yang, Jossue Montes, Jingan Zhou, Fernando A. Ponce, Yuji Zhao
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations