Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

T. Ray, H. Zhu, I. S. Elango, Deirdre Meldrum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary met al-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.

Original languageEnglish (US)
Title of host publication2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011
Pages213-216
Number of pages4
DOIs
StatePublished - Apr 13 2011
Event24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011 - Cancun, Mexico
Duration: Jan 23 2011Jan 27 2011

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

Other24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011
CountryMexico
CityCancun
Period1/23/111/27/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Ray, T., Zhu, H., Elango, I. S., & Meldrum, D. (2011). Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. In 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011 (pp. 213-216). [5734399] (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2011.5734399