Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica

T. Ray, H. Zhu, I. S. Elango, Deirdre Meldrum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary met al-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages213-216
Number of pages4
DOIs
StatePublished - 2011
Event24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011 - Cancun, Mexico
Duration: Jan 23 2011Jan 27 2011

Other

Other24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011
CountryMexico
CityCancun
Period1/23/111/27/11

Fingerprint

Reactive ion etching
Fused silica
masking
Flow of gases
Flow rate
etching
silicon dioxide
Processing
Chemical analysis
gas flow
ions
flow velocity
electrical resistivity
oxides
Oxide semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Ray, T., Zhu, H., Elango, I. S., & Meldrum, D. (2011). Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 213-216). [5734399] https://doi.org/10.1109/MEMSYS.2011.5734399

Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. / Ray, T.; Zhu, H.; Elango, I. S.; Meldrum, Deirdre.

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2011. p. 213-216 5734399.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ray, T, Zhu, H, Elango, IS & Meldrum, D 2011, Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. in Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)., 5734399, pp. 213-216, 24th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2011, Cancun, Mexico, 1/23/11. https://doi.org/10.1109/MEMSYS.2011.5734399
Ray T, Zhu H, Elango IS, Meldrum D. Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2011. p. 213-216. 5734399 https://doi.org/10.1109/MEMSYS.2011.5734399
Ray, T. ; Zhu, H. ; Elango, I. S. ; Meldrum, Deirdre. / Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2011. pp. 213-216
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